Elimination of silicon hillocks using an alkaline complexant etching system

Carmen Moldovan; Rodica Iosub; Mircea Modreanu

doi:10.1016/S1466-6049(01)00117-9

Elimination of silicon hillocks using an alkaline complexant etching system

Carmen Moldovan
, Rodica Iosub
, Mircea Modreanu

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents the results obtained in silicon hillock elimination using alkaline solutions: KOH, NaOH, LiOH·H₂O with an added complexant. The added complexant in alkaline solutions is azocalix[4]arene. The alkaline solutions were compared and analysed with and without added complexant for their effect on hillocks. The behaviour of these solutions is explained using the theory of molar conductivity. The results show that use of the complexant permits control of the etching process, yielding a smooth silicon surface, almost free of hillocks. A comparison between the alkaline etchants (KOH, NaOH, LiOH·H₂O) is made and the influence of the cations in silicon etching process is explained.

Original language	English
Pages (from-to)	1173-1176
Number of pages	4
Journal	International Journal of Inorganic Materials
Volume	3
Issue number	8
DOIs	https://doi.org/10.1016/S1466-6049(01)00117-9
Publication status	Published - 2001
Externally published	Yes

Keywords

Anisotropic etching
Complexant system
Hillocks elimination

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10.1016/S1466-6049(01)00117-9

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title = "Elimination of silicon hillocks using an alkaline complexant etching system",

abstract = "This paper presents the results obtained in silicon hillock elimination using alkaline solutions: KOH, NaOH, LiOH·H2O with an added complexant. The added complexant in alkaline solutions is azocalix[4]arene. The alkaline solutions were compared and analysed with and without added complexant for their effect on hillocks. The behaviour of these solutions is explained using the theory of molar conductivity. The results show that use of the complexant permits control of the etching process, yielding a smooth silicon surface, almost free of hillocks. A comparison between the alkaline etchants (KOH, NaOH, LiOH·H2O) is made and the influence of the cations in silicon etching process is explained.",

keywords = "Anisotropic etching, Complexant system, Hillocks elimination",

author = "Carmen Moldovan and Rodica Iosub and Mircea Modreanu",

year = "2001",

doi = "10.1016/S1466-6049(01)00117-9",

language = "English",

volume = "3",

pages = "1173--1176",

journal = "International Journal of Inorganic Materials",

issn = "1466-6049",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Elimination of silicon hillocks using an alkaline complexant etching system

AU - Moldovan, Carmen

AU - Iosub, Rodica

AU - Modreanu, Mircea

PY - 2001

Y1 - 2001

N2 - This paper presents the results obtained in silicon hillock elimination using alkaline solutions: KOH, NaOH, LiOH·H2O with an added complexant. The added complexant in alkaline solutions is azocalix[4]arene. The alkaline solutions were compared and analysed with and without added complexant for their effect on hillocks. The behaviour of these solutions is explained using the theory of molar conductivity. The results show that use of the complexant permits control of the etching process, yielding a smooth silicon surface, almost free of hillocks. A comparison between the alkaline etchants (KOH, NaOH, LiOH·H2O) is made and the influence of the cations in silicon etching process is explained.

AB - This paper presents the results obtained in silicon hillock elimination using alkaline solutions: KOH, NaOH, LiOH·H2O with an added complexant. The added complexant in alkaline solutions is azocalix[4]arene. The alkaline solutions were compared and analysed with and without added complexant for their effect on hillocks. The behaviour of these solutions is explained using the theory of molar conductivity. The results show that use of the complexant permits control of the etching process, yielding a smooth silicon surface, almost free of hillocks. A comparison between the alkaline etchants (KOH, NaOH, LiOH·H2O) is made and the influence of the cations in silicon etching process is explained.

KW - Anisotropic etching

KW - Complexant system

KW - Hillocks elimination

UR - https://www.scopus.com/pages/publications/0035208614

U2 - 10.1016/S1466-6049(01)00117-9

DO - 10.1016/S1466-6049(01)00117-9

M3 - Article

AN - SCOPUS:0035208614

SN - 1466-6049

VL - 3

SP - 1173

EP - 1176

JO - International Journal of Inorganic Materials

JF - International Journal of Inorganic Materials

IS - 8

ER -

Elimination of silicon hillocks using an alkaline complexant etching system

Abstract

Keywords

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