Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

Yen-Chun Fu; Uthayasankaran Peralagu; Olesya Ignatova; Xu Li; Ravi Droopad; Iain Thayne; Jun Lin; Ian Povey; Scott Monaghan; Paul Hurley

Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

Yen-Chun Fu
, Uthayasankaran Peralagu
, Olesya Ignatova
, Xu Li
, Ravi Droopad
, Iain Thayne
, Jun Lin
, Ian Povey
, Scott Monaghan
, Paul Hurley

Tyndall MicroNano Systems

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Publication status	Published - 2015

Cite this

@inproceedings{b718613bfa9c46cf88dc4cb47b31be15,

title = "Energy-band parameter of atomic layer deposited Al2O3 \& sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces",

author = "Yen-Chun Fu and Uthayasankaran Peralagu and Olesya Ignatova and Xu Li and Ravi Droopad and Iain Thayne and Jun Lin and Ian Povey and Scott Monaghan and Paul Hurley",

year = "2015",

language = "Undefined/Unknown",

booktitle = "Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)",

}

Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. / Fu, Yen-Chun; Peralagu, Uthayasankaran; Ignatova, Olesya et al.
Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). 2015.

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

AU - Fu, Yen-Chun

AU - Peralagu, Uthayasankaran

AU - Ignatova, Olesya

AU - Li, Xu

AU - Droopad, Ravi

AU - Thayne, Iain

AU - Lin, Jun

AU - Povey, Ian

AU - Monaghan, Scott

AU - Hurley, Paul

PY - 2015

Y1 - 2015

UR - https://publons.com/wos-op/publon/3812935/

M3 - Conference proceeding

BT - Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

ER -

Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

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