Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

Yen Chun Fu; Uthayasankaran Peralagu; Olesya Ignatova; Xu Li; Ravi Droopad; Iain Thayne; Jun Lin; Ian Povey; Scott Monaghan; Paul Hurley

doi:10.1109/PRIME.2015.7251406

Energy-band parameter of atomic layer deposited Al₂O₃ & sulphur passivated molecular beam epitaxially grown (110) In_0.53Ga_0.47As surfaces

Yen Chun Fu
, Uthayasankaran Peralagu
, Olesya Ignatova
, Xu Li
, Ravi Droopad
, Iain Thayne
, Jun Lin
, Ian Povey
, Scott Monaghan
, Paul Hurley

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Based on sulphur passivation (10% (NH₄)₂S, 20min), the interface of MOS capacitors between atomic-layer-deposited Al₂O₃ and (110)-oriented p-type In_0.53Ga_0.47As layers indicate the capability of Fermi level movement and minority carrier inversion. C_ox has effectively extracted by G_m/ω &-ωdC/dω. Forming gas annealing (N₂:H₂ 5%:95% at 350°C, 30min) improves minority carrier response and the interface trap density around the midgap estimated to be 4.4×10¹²(1.6×10¹²) cm^-2 eV^-1 before (and after) FGA. Moreover, Fowler-Nordheim (FN) tunneling current provides the conduction band offset at the surface between Al₂O₃ and In_0.53Ga_0.47As (110)-oriented layer is ∼1.81eV and the barrier height is estimated to be the same after FGA. Finally, the band parameter of Al₂O₃ and In_0.53Ga_0.47As

Original language	English
Title of host publication	2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	346-348
Number of pages	3
ISBN (Electronic)	9781479982295
DOIs	https://doi.org/10.1109/PRIME.2015.7251406
Publication status	Published - 9 Sep 2015
Event	11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015 - Glasgow, United Kingdom Duration: 29 Jun 2015 → 2 Jul 2015

Publication series

Name	2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015

Conference

Conference	11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015
Country/Territory	United Kingdom
City	Glasgow
Period	29/06/15 → 2/07/15

Keywords

(110)-oriented
band parameter
FGA
In GaAs
MOSCAPs
Sulfur passivation

Access to Document

10.1109/PRIME.2015.7251406

Cite this

Fu, Y. C., Peralagu, U., Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S., & Hurley, P. (2015). Energy-band parameter of atomic layer deposited Al₂O₃ & sulphur passivated molecular beam epitaxially grown (110) In_0.53Ga_0.47As surfaces. In 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015 (pp. 346-348). Article 7251406 (2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PRIME.2015.7251406

Fu, Yen Chun ; Peralagu, Uthayasankaran ; Ignatova, Olesya et al. / Energy-band parameter of atomic layer deposited Al₂O₃ & sulphur passivated molecular beam epitaxially grown (110) In_0.53Ga_0.47As surfaces. 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 346-348 (2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015).

@inbook{a407f938bd094705bb33fd31e7d6e3b4,

title = "Energy-band parameter of atomic layer deposited Al2O3 \& sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces",

abstract = "Based on sulphur passivation (10\% (NH4)2S, 20min), the interface of MOS capacitors between atomic-layer-deposited Al2O3 and (110)-oriented p-type In0.53Ga0.47As layers indicate the capability of Fermi level movement and minority carrier inversion. Cox has effectively extracted by Gm/ω \&-ωdC/dω. Forming gas annealing (N2:H2 5\%:95\% at 350°C, 30min) improves minority carrier response and the interface trap density around the midgap estimated to be 4.4×1012(1.6×1012) cm-2 eV-1 before (and after) FGA. Moreover, Fowler-Nordheim (FN) tunneling current provides the conduction band offset at the surface between Al2O3 and In0.53Ga0.47As (110)-oriented layer is ∼1.81eV and the barrier height is estimated to be the same after FGA. Finally, the band parameter of Al2O3 and In0.53Ga0.47As",

keywords = "(110)-oriented, band parameter, FGA, In GaAs, MOSCAPs, Sulfur passivation",

author = "Fu, \{Yen Chun\} and Uthayasankaran Peralagu and Olesya Ignatova and Xu Li and Ravi Droopad and Iain Thayne and Jun Lin and Ian Povey and Scott Monaghan and Paul Hurley",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015 ; Conference date: 29-06-2015 Through 02-07-2015",

year = "2015",

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day = "9",

doi = "10.1109/PRIME.2015.7251406",

language = "English",

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Fu, YC, Peralagu, U, Ignatova, O, Li, X, Droopad, R, Thayne, I, Lin, J , Povey, I, Monaghan, S & Hurley, P 2015, Energy-band parameter of atomic layer deposited Al₂O₃ & sulphur passivated molecular beam epitaxially grown (110) In_0.53Ga_0.47As surfaces. in 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015., 7251406, 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015, Institute of Electrical and Electronics Engineers Inc., pp. 346-348, 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015, Glasgow, United Kingdom, 29/06/15. https://doi.org/10.1109/PRIME.2015.7251406

Energy-band parameter of atomic layer deposited Al₂O₃ & sulphur passivated molecular beam epitaxially grown (110) In_0.53Ga_0.47As surfaces. / Fu, Yen Chun; Peralagu, Uthayasankaran; Ignatova, Olesya et al.
2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 346-348 7251406 (2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

AU - Fu, Yen Chun

AU - Peralagu, Uthayasankaran

AU - Ignatova, Olesya

AU - Li, Xu

AU - Droopad, Ravi

AU - Thayne, Iain

AU - Lin, Jun

AU - Povey, Ian

AU - Monaghan, Scott

AU - Hurley, Paul

PY - 2015/9/9

Y1 - 2015/9/9

N2 - Based on sulphur passivation (10% (NH4)2S, 20min), the interface of MOS capacitors between atomic-layer-deposited Al2O3 and (110)-oriented p-type In0.53Ga0.47As layers indicate the capability of Fermi level movement and minority carrier inversion. Cox has effectively extracted by Gm/ω &-ωdC/dω. Forming gas annealing (N2:H2 5%:95% at 350°C, 30min) improves minority carrier response and the interface trap density around the midgap estimated to be 4.4×1012(1.6×1012) cm-2 eV-1 before (and after) FGA. Moreover, Fowler-Nordheim (FN) tunneling current provides the conduction band offset at the surface between Al2O3 and In0.53Ga0.47As (110)-oriented layer is ∼1.81eV and the barrier height is estimated to be the same after FGA. Finally, the band parameter of Al2O3 and In0.53Ga0.47As

AB - Based on sulphur passivation (10% (NH4)2S, 20min), the interface of MOS capacitors between atomic-layer-deposited Al2O3 and (110)-oriented p-type In0.53Ga0.47As layers indicate the capability of Fermi level movement and minority carrier inversion. Cox has effectively extracted by Gm/ω &-ωdC/dω. Forming gas annealing (N2:H2 5%:95% at 350°C, 30min) improves minority carrier response and the interface trap density around the midgap estimated to be 4.4×1012(1.6×1012) cm-2 eV-1 before (and after) FGA. Moreover, Fowler-Nordheim (FN) tunneling current provides the conduction band offset at the surface between Al2O3 and In0.53Ga0.47As (110)-oriented layer is ∼1.81eV and the barrier height is estimated to be the same after FGA. Finally, the band parameter of Al2O3 and In0.53Ga0.47As

KW - (110)-oriented

KW - band parameter

KW - FGA

KW - In GaAs

KW - MOSCAPs

KW - Sulfur passivation

UR - https://www.scopus.com/pages/publications/84946819986

U2 - 10.1109/PRIME.2015.7251406

DO - 10.1109/PRIME.2015.7251406

M3 - Chapter

AN - SCOPUS:84946819986

T3 - 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015

SP - 346

EP - 348

BT - 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015

Y2 - 29 June 2015 through 2 July 2015

ER -

Fu YC, Peralagu U, Ignatova O, Li X, Droopad R, Thayne I et al. Energy-band parameter of atomic layer deposited Al₂O₃ & sulphur passivated molecular beam epitaxially grown (110) In_0.53Ga_0.47As surfaces. In 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 346-348. 7251406. (2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015). doi: 10.1109/PRIME.2015.7251406