Engineering of InGaAsP layer structures for low divergent long wavelength lasers

B. Corbett; I. Kearney; P. Lambkin; J. Justice; U. Buckley; K. Thomas

doi:10.1049/el:20020369

Engineering of InGaAsP layer structures for low divergent long wavelength lasers

B. Corbett
, I. Kearney
, P. Lambkin
, J. Justice
, U. Buckley
, K. Thomas

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The epitaxial layers of an InGaAsP laser structure were engineered to obtain a transverse mode size of 3.1μm and a FWHM transverse divergence to 22° while retaining singlemode operations. The technique achieved low divergence without epitaxial overgrowth and reduced packaging costs. A 32% butt coupling efficiency to uncoated single mode fibers (SMF) was measured.

Original language	English
Pages (from-to)	515-516
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	11
DOIs	https://doi.org/10.1049/el:20020369
Publication status	Published - 23 May 2002

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title = "Engineering of InGaAsP layer structures for low divergent long wavelength lasers",

abstract = "The epitaxial layers of an InGaAsP laser structure were engineered to obtain a transverse mode size of 3.1μm and a FWHM transverse divergence to 22° while retaining singlemode operations. The technique achieved low divergence without epitaxial overgrowth and reduced packaging costs. A 32\% butt coupling efficiency to uncoated single mode fibers (SMF) was measured.",

author = "B. Corbett and I. Kearney and P. Lambkin and J. Justice and U. Buckley and K. Thomas",

year = "2002",

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doi = "10.1049/el:20020369",

language = "English",

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journal = "Electronics Letters",

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T1 - Engineering of InGaAsP layer structures for low divergent long wavelength lasers

AU - Corbett, B.

AU - Kearney, I.

AU - Lambkin, P.

AU - Justice, J.

AU - Buckley, U.

AU - Thomas, K.

PY - 2002/5/23

Y1 - 2002/5/23

N2 - The epitaxial layers of an InGaAsP laser structure were engineered to obtain a transverse mode size of 3.1μm and a FWHM transverse divergence to 22° while retaining singlemode operations. The technique achieved low divergence without epitaxial overgrowth and reduced packaging costs. A 32% butt coupling efficiency to uncoated single mode fibers (SMF) was measured.

AB - The epitaxial layers of an InGaAsP laser structure were engineered to obtain a transverse mode size of 3.1μm and a FWHM transverse divergence to 22° while retaining singlemode operations. The technique achieved low divergence without epitaxial overgrowth and reduced packaging costs. A 32% butt coupling efficiency to uncoated single mode fibers (SMF) was measured.

UR - https://www.scopus.com/pages/publications/0037161876

U2 - 10.1049/el:20020369

DO - 10.1049/el:20020369

M3 - Article

AN - SCOPUS:0037161876

SN - 0013-5194

VL - 38

SP - 515

EP - 516

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Engineering of InGaAsP layer structures for low divergent long wavelength lasers

Abstract

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