Engineering the magnetic properties of Ge1-x Mnx nanowires

Olga Kazakova; Jaideep S. Kulkarni; Donna C. Arnold; Justin D. Holmes

doi:10.1063/1.2694052

Engineering the magnetic properties of Ge1-x Mnx nanowires

Olga Kazakova
, Jaideep S. Kulkarni
, Donna C. Arnold
, Justin D. Holmes

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-x Mnx NWs and Ge Ge1-x Mnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-x Mnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (Tann =750 °C) demonstrating overall compatibility of Ge1-x Mnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high- TC ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high TC in the system. The magnetic properties of the one-dimensional Ge1-x Mnx nanostructures can be understood by considering interface related phenomena.

Original language	English
Article number	09H108
Journal	Journal of Applied Physics
Volume	101
Issue number	9
DOIs	https://doi.org/10.1063/1.2694052
Publication status	Published - 2007

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https://hdl.handle.net/10468/4227Licence: CC BY-NC-ND

Cite this

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title = "Engineering the magnetic properties of Ge1-x Mnx nanowires",

abstract = "Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-x Mnx NWs and Ge Ge1-x Mnx nanocables (NCs) (x=1\%-5\%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-x Mnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (Tann =750 °C) demonstrating overall compatibility of Ge1-x Mnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high- TC ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high TC in the system. The magnetic properties of the one-dimensional Ge1-x Mnx nanostructures can be understood by considering interface related phenomena.",

author = "Olga Kazakova and Kulkarni, \{Jaideep S.\} and Arnold, \{Donna C.\} and Holmes, \{Justin D.\}",

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doi = "10.1063/1.2694052",

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volume = "101",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Engineering the magnetic properties of Ge1-x Mnx nanowires

AU - Kazakova, Olga

AU - Kulkarni, Jaideep S.

AU - Arnold, Donna C.

AU - Holmes, Justin D.

PY - 2007

Y1 - 2007

N2 - Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-x Mnx NWs and Ge Ge1-x Mnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-x Mnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (Tann =750 °C) demonstrating overall compatibility of Ge1-x Mnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high- TC ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high TC in the system. The magnetic properties of the one-dimensional Ge1-x Mnx nanostructures can be understood by considering interface related phenomena.

AB - Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-x Mnx NWs and Ge Ge1-x Mnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-x Mnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (Tann =750 °C) demonstrating overall compatibility of Ge1-x Mnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high- TC ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high TC in the system. The magnetic properties of the one-dimensional Ge1-x Mnx nanostructures can be understood by considering interface related phenomena.

UR - https://www.scopus.com/pages/publications/34248549718

U2 - 10.1063/1.2694052

DO - 10.1063/1.2694052

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VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Engineering the magnetic properties of Ge1-x Mnx nanowires

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