@inbook{5a09f70250ab4ee89087785fc2d1d154,
title = "Enhanced efficiency of near-UV emitting LEDs for solid-state lighting applications",
abstract = "The performance of a series of near-UV (∼385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the lightemitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50μm in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.",
keywords = "AlInGaN, Flip-chip, InGaN, MOVPE, Near-UV emitting LEDs",
author = "D. Zhu and B. Corbett and B. Roycroft and P. Maaskant and C. McAleese and M. Akhter and Kappers, \{M. J.\} and Humphreys, \{C. J.\}",
year = "2007",
doi = "10.1117/12.758799",
language = "English",
isbn = "9780819469656",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Manufacturing LEDs for Lighting and Displays",
note = "Manufacturing LEDs for Lighting and Displays ; Conference date: 10-09-2007 Through 11-09-2007",
}