TY - GEN
T1 - Epitaxy of III-V based channels on Si and transistor integration for 12-10nm node CMOS
AU - Caymax, Matty
AU - Merckling, Clement
AU - Wang, Gang
AU - Orzali, Tommaso
AU - Weiming Guo, Guo
AU - Vandervorst, Wilfried
AU - Dekoster, Johan
AU - Waldron, Niamh
AU - Thean, Aaron
PY - 2012
Y1 - 2012
N2 - Moore's Law describes the scaling of Si-based CMOS technology in terms of performance, power consumption, area and cost. As we have reached the physical limits of scaling Si channels, alternative materials with higher carrier mobility such as Ge and IIIV compound semiconductors are in order. This paper reviews some of imec's work on introducing In0.53Ga0.47As in a manufacturable and integratable way into mainstream Si-based CMOS technology. Several major issues are known: dielectric/IIIV interface passivation, mismatch of lattice and crystal structure between IIIV and Si, small bandgap leading to enhanced leakage,... We will discuss mainly the epitaxial growth aspects and the integration of IIIV materials in Si MOSFET devices, and point out some more unexpected materials and device issues.
AB - Moore's Law describes the scaling of Si-based CMOS technology in terms of performance, power consumption, area and cost. As we have reached the physical limits of scaling Si channels, alternative materials with higher carrier mobility such as Ge and IIIV compound semiconductors are in order. This paper reviews some of imec's work on introducing In0.53Ga0.47As in a manufacturable and integratable way into mainstream Si-based CMOS technology. Several major issues are known: dielectric/IIIV interface passivation, mismatch of lattice and crystal structure between IIIV and Si, small bandgap leading to enhanced leakage,... We will discuss mainly the epitaxial growth aspects and the integration of IIIV materials in Si MOSFET devices, and point out some more unexpected materials and device issues.
KW - CMOS
KW - compound semiconductors
UR - https://www.scopus.com/pages/publications/84873101173
U2 - 10.1109/ICIPRM.2012.6403346
DO - 10.1109/ICIPRM.2012.6403346
M3 - Conference proceeding
AN - SCOPUS:84873101173
SN - 9781467317252
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 159
EP - 162
BT - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
T2 - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Y2 - 27 August 2012 through 30 August 2012
ER -