@inbook{139d51ffefc74c2e89b03f73132198a7,
title = "Equivalent oxide thickness correction in the high-k/In 0.53Ga0.47As/InP system",
abstract = "In this work we present the results of a combined experimental and theoretical investigation into the capacitance-voltage characteristics of the high-k/In0.53Ga0.47As/InP system. The emphasis of the work is placed on the maximum measured and theoretical capacitance for n and p doped In0.53Ga0.47As epitaxial layers in high-k/In 0.53Ga0.47As/InP MOS structures. Theoretical calculations based on ideal systems indicate a highly asymmetric CV response, with an equivalent oxide thickness correction ∼ 1.1nm to 1.5nm (Γ valley only) and ∼0.2 to 0.3 nm for the high-k/n-In0.53Ga0.47As/ InP and high-k/p-In0.53Ga0.47As/InP systems in accumulation respectively. The theoretical calculations are compared to experimental results for Al2O3/In0.53Ga 0.47As/InP MOS structures, and discrepancies are discussed.",
author = "Hurley, \{P. K.\} and Long, \{R. D.\} and T. O'Regan and {\'E} O'Connor and S. Monaghan and V. Djara and Negara, \{M. A.\} and A. O'Mahony and Povey, \{I. M.\} and A. Blake and Nagle, \{R. E.\} and D. O'Connell and Pemble, \{M. E.\} and K. Cherkaoui",
year = "2010",
doi = "10.1149/1.3481632",
language = "English",
isbn = "9781566778220",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "433--444",
booktitle = "Physics and Technology of High-k Materials 8",
address = "United States",
edition = "3",
}