Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))

R. D. Long; B. Shin; S. Monaghan; K. Cherkaoui; J. Cagnon; S. Stemmer; P. C. McIntyre; P. K. Hurley

doi:10.1149/2.119206jes

Erratum: Charged defect quantification in PtAl ₂O ₃In _0.53Ga _0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))

R. D. Long
, B. Shin
, S. Monaghan
, K. Cherkaoui
, J. Cagnon
, S. Stemmer
, P. C. McIntyre
, P. K. Hurley

Research output: Contribution to journal › Comment/Debate

Original language	English
Pages (from-to)	S17
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	6
DOIs	https://doi.org/10.1149/2.119206jes
Publication status	Published - 2012

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10.1149/2.119206jes

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title = "Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))",

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T2 - Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))

AU - Long, R. D.

AU - Shin, B.

AU - Monaghan, S.

AU - Cherkaoui, K.

AU - Cagnon, J.

AU - Stemmer, S.

AU - McIntyre, P. C.

AU - Hurley, P. K.

PY - 2012

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DO - 10.1149/2.119206jes

M3 - Comment/Debate

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JF - Journal of the Electrochemical Society

IS - 6

ER -

Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))

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Erratum: Charged defect quantification in PtAl ₂O ₃In _0.53Ga _0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))