Erratum: Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers (ECS J. Solid State Sci. Technol. (2020) 9 033001 (2020)DOI: 10.1149/2162-8777/ab74c7

C. Claeys; P. C. Hsu; Y. Mols; H. Han; H. Bender; F. Seidel; P. Carolan; C. Merckling; A. Alian; N. Waldron; G. Eneman; N. Collaert; M. Heyns; E. Simoen

doi:10.1149/2162-8777/ab790c

Erratum: Electrical Activity of Extended Defects in Relaxed In_xGa_1-xAs Hetero-Epitaxial Layers (ECS J. Solid State Sci. Technol. (2020) 9 033001 (2020)DOI: 10.1149/2162-8777/ab74c7

C. Claeys
, P. C. Hsu
, Y. Mols
, H. Han
, H. Bender
, F. Seidel
, P. Carolan
, C. Merckling
, A. Alian
, N. Waldron
, G. Eneman
, N. Collaert
, M. Heyns
, E. Simoen

Research output: Contribution to journal › Comment/Debate

Abstract

In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented).

Original language	English
Article number	039002
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/2162-8777/ab790c
Publication status	Published - Mar 2020
Externally published	Yes

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Claeys, C., Hsu, P. C., Mols, Y., Han, H., Bender, H., Seidel, F., Carolan, P., Merckling, C., Alian, A., Waldron, N., Eneman, G., Collaert, N., Heyns, M., & Simoen, E. (2020). Erratum: Electrical Activity of Extended Defects in Relaxed In_xGa_1-xAs Hetero-Epitaxial Layers (ECS J. Solid State Sci. Technol. (2020) 9 033001 (2020)DOI: 10.1149/2162-8777/ab74c7. ECS Journal of Solid State Science and Technology, 9(3), Article 039002. https://doi.org/10.1149/2162-8777/ab790c

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title = "Erratum: Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers (ECS J. Solid State Sci. Technol. (2020) 9 033001 (2020)DOI: 10.1149/2162-8777/ab74c7",

abstract = "In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented).",

author = "C. Claeys and Hsu, \{P. C.\} and Y. Mols and H. Han and H. Bender and F. Seidel and P. Carolan and C. Merckling and A. Alian and N. Waldron and G. Eneman and N. Collaert and M. Heyns and E. Simoen",

year = "2020",

month = mar,

doi = "10.1149/2162-8777/ab790c",

language = "English",

volume = "9",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "3",

}

Claeys, C, Hsu, PC, Mols, Y, Han, H, Bender, H, Seidel, F, Carolan, P, Merckling, C, Alian, A, Waldron, N, Eneman, G, Collaert, N, Heyns, M & Simoen, E 2020, 'Erratum: Electrical Activity of Extended Defects in Relaxed In_xGa_1-xAs Hetero-Epitaxial Layers (ECS J. Solid State Sci. Technol. (2020) 9 033001 (2020)DOI: 10.1149/2162-8777/ab74c7', ECS Journal of Solid State Science and Technology, vol. 9, no. 3, 039002. https://doi.org/10.1149/2162-8777/ab790c

TY - JOUR

T1 - Erratum

T2 - Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers (ECS J. Solid State Sci. Technol. (2020) 9 033001 (2020)DOI: 10.1149/2162-8777/ab74c7

AU - Claeys, C.

AU - Hsu, P. C.

AU - Mols, Y.

AU - Han, H.

AU - Bender, H.

AU - Seidel, F.

AU - Carolan, P.

AU - Merckling, C.

AU - Alian, A.

AU - Waldron, N.

AU - Eneman, G.

AU - Collaert, N.

AU - Heyns, M.

AU - Simoen, E.

PY - 2020/3

Y1 - 2020/3

N2 - In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented).

AB - In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented).

UR - https://www.scopus.com/pages/publications/85097313614

U2 - 10.1149/2162-8777/ab790c

DO - 10.1149/2162-8777/ab790c

M3 - Comment/Debate

AN - SCOPUS:85097313614

SN - 2162-8769

VL - 9

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 3

M1 - 039002

ER -

Erratum: Electrical Activity of Extended Defects in Relaxed In_xGa_1-xAs Hetero-Epitaxial Layers (ECS J. Solid State Sci. Technol. (2020) 9 033001 (2020)DOI: 10.1149/2162-8777/ab74c7

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