Erratum: Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c)

C. Claeys; P. C. Hsu; Y. Mols; H. Han; H. Bender; F. Seidel; P. Carolan; C. Merckling; A. Alian; N. Waldron; G. Eneman; N. Collaert; M. Heyns; E. Simoen

doi:10.1149/2162-8777/ab74c7

Erratum: Electrical activity of extended defects in relaxed In_xGa_1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c)

C. Claeys
, P. C. Hsu
, Y. Mols
, H. Han
, H. Bender
, F. Seidel
, P. Carolan
, C. Merckling
, A. Alian
, N. Waldron
, G. Eneman
, N. Collaert
, M. Heyns
, E. Simoen

KU Leuven
Interuniversitair Micro-Elektronica Centrum
Ghent University

Research output: Contribution to journal › Comment/Debate

Abstract

In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented) The publisher apologizes for any inconvenience caused.

Original language	English
Article number	033001
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/2162-8777/ab74c7
Publication status	Published - Mar 2020
Externally published	Yes

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10.1149/2162-8777/ab74c7

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Claeys, C., Hsu, P. C., Mols, Y., Han, H., Bender, H., Seidel, F., Carolan, P., Merckling, C., Alian, A., Waldron, N., Eneman, G., Collaert, N., Heyns, M., & Simoen, E. (2020). Erratum: Electrical activity of extended defects in relaxed In_xGa_1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c). ECS Journal of Solid State Science and Technology, 9(3), Article 033001. https://doi.org/10.1149/2162-8777/ab74c7

@article{ee65cd9247bc478f81503813aaeb474a,

title = "Erratum: Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c)",

abstract = "In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented) The publisher apologizes for any inconvenience caused.",

author = "C. Claeys and Hsu, \{P. C.\} and Y. Mols and H. Han and H. Bender and F. Seidel and P. Carolan and C. Merckling and A. Alian and N. Waldron and G. Eneman and N. Collaert and M. Heyns and E. Simoen",

note = "Publisher Copyright: {\textcopyright} 2020 The Electrochemical Society ({"}ECS{"}). Published on behalf of ECS by IOP Publishing Limited.",

year = "2020",

month = mar,

doi = "10.1149/2162-8777/ab74c7",

language = "English",

volume = "9",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "3",

}

Claeys, C, Hsu, PC, Mols, Y, Han, H, Bender, H, Seidel, F, Carolan, P, Merckling, C, Alian, A, Waldron, N, Eneman, G, Collaert, N, Heyns, M & Simoen, E 2020, 'Erratum: Electrical activity of extended defects in relaxed In_xGa_1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c)', ECS Journal of Solid State Science and Technology, vol. 9, no. 3, 033001. https://doi.org/10.1149/2162-8777/ab74c7

Erratum: Electrical activity of extended defects in relaxed In_xGa_1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c). / Claeys, C.; Hsu, P. C.; Mols, Y. et al.
In: ECS Journal of Solid State Science and Technology, Vol. 9, No. 3, 033001, 03.2020.

Research output: Contribution to journal › Comment/Debate

TY - JOUR

T1 - Erratum

T2 - Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c)

AU - Claeys, C.

AU - Hsu, P. C.

AU - Mols, Y.

AU - Han, H.

AU - Bender, H.

AU - Seidel, F.

AU - Carolan, P.

AU - Merckling, C.

AU - Alian, A.

AU - Waldron, N.

AU - Eneman, G.

AU - Collaert, N.

AU - Heyns, M.

AU - Simoen, E.

PY - 2020/3

Y1 - 2020/3

N2 - In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented) The publisher apologizes for any inconvenience caused.

AB - In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: (Formula Presented) The publisher apologizes for any inconvenience caused.

UR - https://www.scopus.com/pages/publications/85097417243

U2 - 10.1149/2162-8777/ab74c7

DO - 10.1149/2162-8777/ab74c7

M3 - Comment/Debate

AN - SCOPUS:85097417243

SN - 2162-8769

VL - 9

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 3

M1 - 033001

ER -

Erratum: Electrical activity of extended defects in relaxed In_xGa_1-xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab790c)

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