Erratum: Electrical activity of extended defects in relaxed InxGa1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7)

C. Claeys; P. C. Hsu; Y. Mols; H. Han; H. Bender; F. Seidel; P. Carolan; C. Merckling; A. Alian; N. Waldron; G. Eneman; N. Collaert; M. Heyns; E. Simoen

doi:10.1149/2162-8777/ab790c/pdf

Erratum: Electrical activity of extended defects in relaxed In_xGa_1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7)

C. Claeys
, P. C. Hsu
, Y. Mols
, H. Han
, H. Bender
, F. Seidel
, P. Carolan
, C. Merckling
, A. Alian
, N. Waldron
, G. Eneman
, N. Collaert
, M. Heyns
, E. Simoen

Research output: Contribution to journal › Comment/Debate

Abstract

In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: qn_i(x, T)s_n,pn_thn,p I_defect = [5] 2 _cosh (E_T(x) - E_i(x)) k_BT Equation 6a should read: I_defect = qn_i(x, T)s_n,pn_thn,p/2 [6a] Equation 6b should read: qn_i(x, T)s_n,pn_thn,p I_defect = [6b] _exp (∣E_T(x) - E_i(x)∣) k_BT The publisher apologizes for any inconvenience caused.

Original language	English
Article number	039002
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/2162-8777/ab790c/pdf
Publication status	Published - 4 Mar 2020
Externally published	Yes

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Claeys, C., Hsu, P. C., Mols, Y., Han, H., Bender, H., Seidel, F., Carolan, P., Merckling, C., Alian, A., Waldron, N., Eneman, G., Collaert, N., Heyns, M., & Simoen, E. (2020). Erratum: Electrical activity of extended defects in relaxed In_xGa_1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7). ECS Journal of Solid State Science and Technology, 9(3), Article 039002. https://doi.org/10.1149/2162-8777/ab790c/pdf

@article{9a3869de0456458f86a204a918a00ebe,

title = "Erratum: Electrical activity of extended defects in relaxed InxGa1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7)",

abstract = "In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: qni(x, T)sn,pnthn,p Idefect = [5] 2 cosh (ET(x) - Ei(x)) kBT Equation 6a should read: Idefect = qni(x, T)sn,pnthn,p/2 [6a] Equation 6b should read: qni(x, T)sn,pnthn,p Idefect = [6b] exp (∣ET(x) - Ei(x)∣) kBT The publisher apologizes for any inconvenience caused.",

author = "C. Claeys and Hsu, \{P. C.\} and Y. Mols and H. Han and H. Bender and F. Seidel and P. Carolan and C. Merckling and A. Alian and N. Waldron and G. Eneman and N. Collaert and M. Heyns and E. Simoen",

note = "Publisher Copyright: {\textcopyright} 2020 The Electrochemical Society (“ECS”).",

year = "2020",

month = mar,

day = "4",

doi = "10.1149/2162-8777/ab790c/pdf",

language = "English",

volume = "9",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "3",

}

Claeys, C, Hsu, PC, Mols, Y, Han, H, Bender, H, Seidel, F, Carolan, P, Merckling, C, Alian, A, Waldron, N, Eneman, G, Collaert, N, Heyns, M & Simoen, E 2020, 'Erratum: Electrical activity of extended defects in relaxed In_xGa_1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7)', ECS Journal of Solid State Science and Technology, vol. 9, no. 3, 039002. https://doi.org/10.1149/2162-8777/ab790c/pdf

Erratum: Electrical activity of extended defects in relaxed In_xGa_1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7). / Claeys, C.; Hsu, P. C.; Mols, Y. et al.
In: ECS Journal of Solid State Science and Technology, Vol. 9, No. 3, 039002, 04.03.2020.

Research output: Contribution to journal › Comment/Debate

TY - JOUR

T1 - Erratum

T2 - Electrical activity of extended defects in relaxed InxGa1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7)

AU - Claeys, C.

AU - Hsu, P. C.

AU - Mols, Y.

AU - Han, H.

AU - Bender, H.

AU - Seidel, F.

AU - Carolan, P.

AU - Merckling, C.

AU - Alian, A.

AU - Waldron, N.

AU - Eneman, G.

AU - Collaert, N.

AU - Heyns, M.

AU - Simoen, E.

PY - 2020/3/4

Y1 - 2020/3/4

N2 - In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: qni(x, T)sn,pnthn,p Idefect = [5] 2 cosh (ET(x) - Ei(x)) kBT Equation 6a should read: Idefect = qni(x, T)sn,pnthn,p/2 [6a] Equation 6b should read: qni(x, T)sn,pnthn,p Idefect = [6b] exp (∣ET(x) - Ei(x)∣) kBT The publisher apologizes for any inconvenience caused.

AB - In the course of the production process, typographical errors were introduced in Eqs. 5, 6a and 6b of this paper. They are corrected below. On page 2, Eq. 5 should read as follows: qni(x, T)sn,pnthn,p Idefect = [5] 2 cosh (ET(x) - Ei(x)) kBT Equation 6a should read: Idefect = qni(x, T)sn,pnthn,p/2 [6a] Equation 6b should read: qni(x, T)sn,pnthn,p Idefect = [6b] exp (∣ET(x) - Ei(x)∣) kBT The publisher apologizes for any inconvenience caused.

UR - https://www.scopus.com/pages/publications/85082760212

U2 - 10.1149/2162-8777/ab790c/pdf

DO - 10.1149/2162-8777/ab790c/pdf

M3 - Comment/Debate

AN - SCOPUS:85082760212

SN - 2162-8769

VL - 9

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 3

M1 - 039002

ER -

Erratum: Electrical activity of extended defects in relaxed In_xGa_1–xAs hetero-epitaxial layers (ECS Journal of Solid State Science and Technology (2020) 9 (033001) DOI: 10.1149/2162-8777/ab74c7)

Abstract

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