Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))

Jay Mody; Ray Duffy; Pierre Eyben; Jozefien Goossens; Alain Moussa; Wouter Polspoel; Bart Berghmans; M. J.H. Van Dal; B. J. Pawlak; M. Kaiser; R. G.R. Weemaes; Wilfried Vandervorst

doi:10.1116/1.3432119

Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))

Jay Mody
, Ray Duffy
, Pierre Eyben
, Jozefien Goossens
, Alain Moussa
, Wouter Polspoel
, Bart Berghmans
, M. J.H. Van Dal
, B. J. Pawlak
, M. Kaiser
, R. G.R. Weemaes
, Wilfried Vandervorst

Research output: Contribution to journal › Comment/Debate

Original language	English
Pages (from-to)	648
Number of pages	1
Journal	Journal of Vacuum Science and Technology B
Volume	28
Issue number	3
DOIs	https://doi.org/10.1116/1.3432119
Publication status	Published - May 2010
Externally published	Yes

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10.1116/1.3432119

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Mody, J., Duffy, R., Eyben, P., Goossens, J., Moussa, A., Polspoel, W., Berghmans, B., Van Dal, M. J. H., Pawlak, B. J., Kaiser, M., Weemaes, R. G. R., & Vandervorst, W. (2010). Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5)). Journal of Vacuum Science and Technology B, 28(3), 648. https://doi.org/10.1116/1.3432119

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title = "Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))",

author = "Jay Mody and Ray Duffy and Pierre Eyben and Jozefien Goossens and Alain Moussa and Wouter Polspoel and Bart Berghmans and \{Van Dal\}, \{M. J.H.\} and Pawlak, \{B. J.\} and M. Kaiser and Weemaes, \{R. G.R.\} and Wilfried Vandervorst",

year = "2010",

month = may,

doi = "10.1116/1.3432119",

language = "English",

volume = "28",

pages = "648",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

}

Mody, J, Duffy, R, Eyben, P, Goossens, J, Moussa, A, Polspoel, W, Berghmans, B, Van Dal, MJH, Pawlak, BJ, Kaiser, M, Weemaes, RGR & Vandervorst, W 2010, 'Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))', Journal of Vacuum Science and Technology B, vol. 28, no. 3, pp. 648. https://doi.org/10.1116/1.3432119

Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5)). / Mody, Jay; Duffy, Ray; Eyben, Pierre et al.
In: Journal of Vacuum Science and Technology B, Vol. 28, No. 3, 05.2010, p. 648.

Research output: Contribution to journal › Comment/Debate

TY - JOUR

T1 - Erratum

T2 - Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))

AU - Mody, Jay

AU - Duffy, Ray

AU - Eyben, Pierre

AU - Goossens, Jozefien

AU - Moussa, Alain

AU - Polspoel, Wouter

AU - Berghmans, Bart

AU - Van Dal, M. J.H.

AU - Pawlak, B. J.

AU - Kaiser, M.

AU - Weemaes, R. G.R.

AU - Vandervorst, Wilfried

PY - 2010/5

Y1 - 2010/5

UR - https://www.scopus.com/pages/publications/77952976037

U2 - 10.1116/1.3432119

DO - 10.1116/1.3432119

M3 - Comment/Debate

AN - SCOPUS:77952976037

SN - 2166-2746

VL - 28

SP - 648

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 3

ER -

Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))

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