Estimation of the Γ-X crossover composition in disordered (AlxGa1-x)0.5In0.5P using n-i-n diodes

A. P. Morrison; J. D. Lambkin; C. J. van der Poel; A. Valster

Estimation of the Γ-X crossover composition in disordered (Al_xGa_1-x)_0.5In_0.5P using n-i-n diodes

A. P. Morrison
, J. D. Lambkin
, C. J. van der Poel
, A. Valster

School of Engineering and Architecture

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The conduction band offset between (Al_xGa_1-x)_0.5In_0.5P and Ga_0.5In_0.5P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminum compositions, x, thus providing an estimate of the Γ-X crossover composition in the AlGalnP.

Original language	English
Pages (from-to)	393-396
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1997
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: 7 Dec 1997 → 10 Dec 1997

Cite this

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title = "Estimation of the Γ-X crossover composition in disordered (AlxGa1-x)0.5In0.5P using n-i-n diodes",

abstract = "The conduction band offset between (AlxGa1-x)0.5In0.5P and Ga0.5In0.5P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminum compositions, x, thus providing an estimate of the Γ-X crossover composition in the AlGalnP.",

author = "Morrison, \{A. P.\} and Lambkin, \{J. D.\} and \{van der Poel\}, \{C. J.\} and A. Valster",

year = "1997",

language = "English",

pages = "393--396",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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T1 - Estimation of the Γ-X crossover composition in disordered (AlxGa1-x)0.5In0.5P using n-i-n diodes

AU - Morrison, A. P.

AU - Lambkin, J. D.

AU - van der Poel, C. J.

AU - Valster, A.

PY - 1997

Y1 - 1997

N2 - The conduction band offset between (AlxGa1-x)0.5In0.5P and Ga0.5In0.5P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminum compositions, x, thus providing an estimate of the Γ-X crossover composition in the AlGalnP.

AB - The conduction band offset between (AlxGa1-x)0.5In0.5P and Ga0.5In0.5P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminum compositions, x, thus providing an estimate of the Γ-X crossover composition in the AlGalnP.

UR - https://www.scopus.com/pages/publications/84886447964

M3 - Article

AN - SCOPUS:84886447964

SN - 0163-1918

SP - 393

EP - 396

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Estimation of the Γ-X crossover composition in disordered (Al_xGa_1-x)_0.5In_0.5P using n-i-n diodes

Abstract

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