Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

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Abstract

We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 10 6 ) were developed successfully with the application of the technique, proving its usefulness in process optimisation.

Original languageEnglish
Pages (from-to)849-854
Number of pages6
JournalApplied Surface Science
Volume349
DOIs
Publication statusPublished - 15 Sep 2015

Keywords

  • Arsenates
  • Atomic force microscopy
  • Defects
  • Metalorganic vapor phase epitaxy
  • Semiconducting III-V materials

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