@inbook{646262914bd249e0861d198c27909045,
title = "Evaluation of few-layer MoS2 transistors with a top gate and HfO2 dielectric",
abstract = "Top-gated, few-layer MoS2 transistors with a HfO2 gate dielectric are fabricated and subsequently characterized. Both transistor performance and gate-stack interface quality were characterized with current - voltage (I-V) and capacitance - voltage (C-V) measurements. The interface state density (Dit) was extracted and analyzed. The importance of annealing before high-k deposition to reduce the leakage current of the HfO2 gate oxide was shown. Finally, we show preliminary data of HfO2 on MoSe2 to show the possibility of extending this top-gate approach to other TMDs.",
author = "Young, \{C. D.\} and P. Zhao and P. Bolshakov-Barrett and A. Azcatl and Hurley, \{P. K.\} and Y. Gomeniuk and M. Schmidt and C. Hinkle and Wallace, \{R. M.\}",
note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
year = "2016",
doi = "10.1149/07505.0153ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "153--162",
editor = "S. Kar and K. Kita and D. Landheer and D. Misra",
booktitle = "Semiconductors, Dielectrics, and Metals for Nanoelectronics 14",
address = "United States",
edition = "5",
}