Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes

A. P. Morrison; J. D. Lambkin; C. J. Van Der Poel; A. Valster

doi:10.1109/68.502247

Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes

A. P. Morrison
, J. D. Lambkin
, C. J. Van Der Poel
, A. Valster

School of Engineering and Architecture

Research output: Contribution to journal › Review article › peer-review

Abstract

Three bulk (Al_xGa_1-x)_0.5In_0.5P double heterostructure (DH) lasers were designed and fabricated to examine the effect of incorporating multiquantum barrier (MQB) structures. The first laser, used as a reference, has a conventional structure, while the remaining lasers include MQB structures, one designed to achieve a virtual barrier of 75 meV, the other having a transmission window up to 100 meV above the bulk barrier height. Measurements show a reduction of up to 31% in the room temperature threshold current and an increase in characteristic temperature of 20 K by the inclusion of the optimized MQB structure in comparison with the reference laser. However, since the leaky MQB design also shows a significant room temperature improvement over the reference laser we suggest that the device improvements produced by the MQB structures are not solely due to the formation of a virtual barrier.

Original language	English
Pages (from-to)	849-851
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	7
DOIs	https://doi.org/10.1109/68.502247
Publication status	Published - Jul 1996

Access to Document

10.1109/68.502247

Cite this

@article{abd4cf78d4034d74b59172e71c151921,

title = "Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes",

abstract = "Three bulk (AlxGa1-x)0.5In0.5P double heterostructure (DH) lasers were designed and fabricated to examine the effect of incorporating multiquantum barrier (MQB) structures. The first laser, used as a reference, has a conventional structure, while the remaining lasers include MQB structures, one designed to achieve a virtual barrier of 75 meV, the other having a transmission window up to 100 meV above the bulk barrier height. Measurements show a reduction of up to 31\% in the room temperature threshold current and an increase in characteristic temperature of 20 K by the inclusion of the optimized MQB structure in comparison with the reference laser. However, since the leaky MQB design also shows a significant room temperature improvement over the reference laser we suggest that the device improvements produced by the MQB structures are not solely due to the formation of a virtual barrier.",

author = "Morrison, \{A. P.\} and Lambkin, \{J. D.\} and \{Van Der Poel\}, \{C. J.\} and A. Valster",

year = "1996",

month = jul,

doi = "10.1109/68.502247",

language = "English",

volume = "8",

pages = "849--851",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes

AU - Morrison, A. P.

AU - Lambkin, J. D.

AU - Van Der Poel, C. J.

AU - Valster, A.

PY - 1996/7

Y1 - 1996/7

N2 - Three bulk (AlxGa1-x)0.5In0.5P double heterostructure (DH) lasers were designed and fabricated to examine the effect of incorporating multiquantum barrier (MQB) structures. The first laser, used as a reference, has a conventional structure, while the remaining lasers include MQB structures, one designed to achieve a virtual barrier of 75 meV, the other having a transmission window up to 100 meV above the bulk barrier height. Measurements show a reduction of up to 31% in the room temperature threshold current and an increase in characteristic temperature of 20 K by the inclusion of the optimized MQB structure in comparison with the reference laser. However, since the leaky MQB design also shows a significant room temperature improvement over the reference laser we suggest that the device improvements produced by the MQB structures are not solely due to the formation of a virtual barrier.

AB - Three bulk (AlxGa1-x)0.5In0.5P double heterostructure (DH) lasers were designed and fabricated to examine the effect of incorporating multiquantum barrier (MQB) structures. The first laser, used as a reference, has a conventional structure, while the remaining lasers include MQB structures, one designed to achieve a virtual barrier of 75 meV, the other having a transmission window up to 100 meV above the bulk barrier height. Measurements show a reduction of up to 31% in the room temperature threshold current and an increase in characteristic temperature of 20 K by the inclusion of the optimized MQB structure in comparison with the reference laser. However, since the leaky MQB design also shows a significant room temperature improvement over the reference laser we suggest that the device improvements produced by the MQB structures are not solely due to the formation of a virtual barrier.

UR - https://www.scopus.com/pages/publications/0030197156

U2 - 10.1109/68.502247

DO - 10.1109/68.502247

M3 - Review article

AN - SCOPUS:0030197156

SN - 1041-1135

VL - 8

SP - 849

EP - 851

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 7

ER -

Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this