Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

Controllable doping of two-dimensional (2D) materials is one of the main research challenges associated with the practical realization of 2D semiconductors in hetero-and homo-junctions. We report that the selected-area treatment of MoS2 films with nitrogen plasma can modify the resistivity of the film. To identify the underlying physical mechanism responsible for such observation, we systematically investigated the transport properties of cTLM-patterned contacts on ∼70nm non-intentionally doped (NID), p-and «-doped MoS2 films before and after plasma exposure. Electrical characterization demonstrates that »-type doping of MoS2 is achieved by plasma-induced nitrogen doping. HR-TEM images confirm that no etching of the exposed film has occurred. Our experimental observations are supported by first principles atomic scale simulations suggesting the interaction of nitrogen with defects and vacancies in the poly-crystalline MoS2 films as the origin of doping mechanism. The results indicate low-power nitrogen plasma is an effective approach for ex-situ doping of MoS2.

Original languageEnglish
Title of host publication2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages175-176
Number of pages2
ISBN (Electronic)9781538627723
DOIs
Publication statusPublished - 2 Jul 2017
Event12th IEEE Nanotechnology Materials and Devices Conference, NMDC 2017 - Singapore, Singapore
Duration: 2 Oct 20174 Oct 2017

Publication series

Name2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Volume2018-January

Conference

Conference12th IEEE Nanotechnology Materials and Devices Conference, NMDC 2017
Country/TerritorySingapore
CitySingapore
Period2/10/174/10/17

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