Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

Ailbe O'Manachain

doi:10.1016/J.MEE.2017.05.020

Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronic Engineering
DOIs	https://doi.org/10.1016/J.MEE.2017.05.020
Publication status	Published - 2017

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10.1016/J.MEE.2017.05.020

Cite this

@article{a73cdfd490194e2999f192dde4799680,

title = "Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing",

author = "Ailbe O'Manachain",

year = "2017",

doi = "10.1016/J.MEE.2017.05.020",

language = "Undefined/Unknown",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

AU - O'Manachain, Ailbe

PY - 2017

Y1 - 2017

U2 - 10.1016/J.MEE.2017.05.020

DO - 10.1016/J.MEE.2017.05.020

M3 - Article

SN - 0167-9317

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -