Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

Jun Lin; Scott Monaghan; Karim Cherkaoui; Ian M Povey; Brendan Sheehan; Paul K Hurley

Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronic Engineering
Publication status	Published - 2017

Cite this

@article{6f891519faba459bb89d85dea65efac8,

title = "Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing",

author = "Jun Lin and Scott Monaghan and Karim Cherkaoui and Povey, \{Ian M\} and Brendan Sheehan and Hurley, \{Paul K\}",

year = "2017",

language = "Undefined/Unknown",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

AU - Lin, Jun

AU - Monaghan, Scott

AU - Cherkaoui, Karim

AU - Povey, Ian M

AU - Sheehan, Brendan

AU - Hurley, Paul K

PY - 2017

Y1 - 2017

M3 - Article

SN - 0167-9317

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -