Exciton localization in polar and semipolar (1122) In0.2Ga0.8N/GaN multiple quantum wells

Duc V. Dinh; Silvino Presa; Pleun P. Maaskant; Brian Corbett; Peter J. Parbrook

doi:10.1088/0268-1242/31/8/085006

Exciton localization in polar and semipolar (1122) In_0.2Ga_0.8N/GaN multiple quantum wells

Duc V. Dinh
, Silvino Presa
, Pleun P. Maaskant
, Brian Corbett
, Peter J. Parbrook

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The exciton localization (ELZ) in polar (0001) and semipolar (112-2) In_0.2Ga_0.8N multiplequantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. The ELZ in the (112-2) MQW was found to be much stronger (ELZ degree ς_E 40 70 meV) compared to the (0001) MQW (ς_E 5-11 meV) that was attributed to the anisotropic growth on the (112-2) surface. This strong ELZ was found to cause a blue-shift of the (112-2) MQW exciton emission with rising temperature from 200 to 340 K, irrespective of excitation source used. A lower luminescence efficiency of the (112-2) MQW was attributed to their anisotropic growth, and higher concentrations of unintentional impurities and point defects than the (0001) MQW.

Original language	English
Article number	085006
Journal	Semiconductor Science and Technology
Volume	31
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/31/8/085006
Publication status	Published - 30 Jun 2016

Keywords

InGaN
photoluminescence
semipolar

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10.1088/0268-1242/31/8/085006

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@article{05588ea00723432d99e7ed8ee10909c9,

title = "Exciton localization in polar and semipolar (1122) In0.2Ga0.8N/GaN multiple quantum wells",

abstract = "The exciton localization (ELZ) in polar (0001) and semipolar (112-2) In0.2Ga0.8N multiplequantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. The ELZ in the (112-2) MQW was found to be much stronger (ELZ degree ςE 40 70 meV) compared to the (0001) MQW (ςE 5-11 meV) that was attributed to the anisotropic growth on the (112-2) surface. This strong ELZ was found to cause a blue-shift of the (112-2) MQW exciton emission with rising temperature from 200 to 340 K, irrespective of excitation source used. A lower luminescence efficiency of the (112-2) MQW was attributed to their anisotropic growth, and higher concentrations of unintentional impurities and point defects than the (0001) MQW.",

keywords = "InGaN, photoluminescence, semipolar",

author = "Dinh, \{Duc V.\} and Silvino Presa and Maaskant, \{Pleun P.\} and Brian Corbett and Parbrook, \{Peter J.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

month = jun,

day = "30",

doi = "10.1088/0268-1242/31/8/085006",

language = "English",

volume = "31",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Exciton localization in polar and semipolar (1122) In0.2Ga0.8N/GaN multiple quantum wells

AU - Dinh, Duc V.

AU - Presa, Silvino

AU - Maaskant, Pleun P.

AU - Corbett, Brian

AU - Parbrook, Peter J.

PY - 2016/6/30

Y1 - 2016/6/30

N2 - The exciton localization (ELZ) in polar (0001) and semipolar (112-2) In0.2Ga0.8N multiplequantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. The ELZ in the (112-2) MQW was found to be much stronger (ELZ degree ςE 40 70 meV) compared to the (0001) MQW (ςE 5-11 meV) that was attributed to the anisotropic growth on the (112-2) surface. This strong ELZ was found to cause a blue-shift of the (112-2) MQW exciton emission with rising temperature from 200 to 340 K, irrespective of excitation source used. A lower luminescence efficiency of the (112-2) MQW was attributed to their anisotropic growth, and higher concentrations of unintentional impurities and point defects than the (0001) MQW.

AB - The exciton localization (ELZ) in polar (0001) and semipolar (112-2) In0.2Ga0.8N multiplequantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. The ELZ in the (112-2) MQW was found to be much stronger (ELZ degree ςE 40 70 meV) compared to the (0001) MQW (ςE 5-11 meV) that was attributed to the anisotropic growth on the (112-2) surface. This strong ELZ was found to cause a blue-shift of the (112-2) MQW exciton emission with rising temperature from 200 to 340 K, irrespective of excitation source used. A lower luminescence efficiency of the (112-2) MQW was attributed to their anisotropic growth, and higher concentrations of unintentional impurities and point defects than the (0001) MQW.

KW - InGaN

KW - photoluminescence

KW - semipolar

UR - https://www.scopus.com/pages/publications/84979593595

U2 - 10.1088/0268-1242/31/8/085006

DO - 10.1088/0268-1242/31/8/085006

M3 - Article

AN - SCOPUS:84979593595

SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

M1 - 085006

ER -

Exciton localization in polar and semipolar (1122) In_0.2Ga_0.8N/GaN multiple quantum wells

Abstract

Keywords

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