Exciton localization in semipolar (11 2 2) InGaN multiple quantum wells

Duc V. Dinh; F. Brunner; M. Weyers; B. Corbett; P. J. Parbrook

doi:10.1063/1.4960348

Exciton localization in semipolar (11 2 2) InGaN multiple quantum wells

Duc V. Dinh
, F. Brunner
, M. Weyers
, B. Corbett
, P. J. Parbrook

Research output: Contribution to journal › Article › peer-review

Abstract

The exciton localization in semipolar (11 2 2) In_xGa_1-_xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.

Original language	English
Article number	055705
Journal	Journal of Applied Physics
Volume	120
Issue number	5
DOIs	https://doi.org/10.1063/1.4960348
Publication status	Published - 7 Aug 2016

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title = "Exciton localization in semipolar (11 2 2) InGaN multiple quantum wells",

abstract = "The exciton localization in semipolar (11 2 2) InxGa1-xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.",

author = "Dinh, \{Duc V.\} and F. Brunner and M. Weyers and B. Corbett and Parbrook, \{P. J.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

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doi = "10.1063/1.4960348",

language = "English",

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T1 - Exciton localization in semipolar (11 2 2) InGaN multiple quantum wells

AU - Dinh, Duc V.

AU - Brunner, F.

AU - Weyers, M.

AU - Corbett, B.

AU - Parbrook, P. J.

PY - 2016/8/7

Y1 - 2016/8/7

N2 - The exciton localization in semipolar (11 2 2) InxGa1-xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.

AB - The exciton localization in semipolar (11 2 2) InxGa1-xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.

UR - https://www.scopus.com/pages/publications/84981263335

U2 - 10.1063/1.4960348

DO - 10.1063/1.4960348

M3 - Article

AN - SCOPUS:84981263335

SN - 0021-8979

VL - 120

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 055705

ER -

Exciton localization in semipolar (11 2 2) InGaN multiple quantum wells

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