Excitonic binding energies in non-polar GaN quantum wells

We use a fractional dimensional space approach to calculate the excitonic binding energies in non-polar GaN/AlGaN quantum wells (QWs) as a function of well width. We investigate the influence of the conduction band to valence band offset ratio on the excitonic binding energies. Because the exciton energy is mainly dominated by the electron single-particle states, the calculated binding energies increase strongly with increasing conduction band offset, but the fractional increase in energy remains smaller than that found in previous studies of GaAs/AlGaAs structures, and is also smaller than binding energies deduced from recent experimental analysis of α-plane GaN/Al _0.18Ga_0.82N QWs.