Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

D. V. Lebedev; M. M. Kulagina; S. I. Troshkov; A. S. Vlasov; V. Y. Davydov; A. N. Smirnov; A. A. Bogdanov; J. L. Merz; J. Kapaldo; A. Gocalinska; G. Juska; S. T. Moroni; E. Pelucchi; D. Barettin; S. Rouvimov; A. M. Mintairov

doi:10.1063/1.4979029

Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

D. V. Lebedev
, M. M. Kulagina
, S. I. Troshkov
, A. S. Vlasov
, V. Y. Davydov
, A. N. Smirnov
, A. A. Bogdanov
, J. L. Merz
, J. Kapaldo
, A. Gocalinska
, G. Juska
, S. T. Moroni
, E. Pelucchi
, D. Barettin
, S. Rouvimov
, A. M. Mintairov

Research output: Contribution to journal › Article › peer-review

Abstract

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ∼2 nm, the lateral size of 20-50 nm, and the density of ∼5 × 10⁹ cm⁻². Their emission observed at ∼940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ∼3.2 μm and providing a free spectral range of ∼27 nm and quality factors up to Q∼13 000. Threshold of ∼50 W/cm² and spontaneous emission coupling coefficient of ∼0.2 were measured for this MD-QD system.

Original language	English
Article number	121101
Journal	Applied Physics Letters
Volume	110
Issue number	12
DOIs	https://doi.org/10.1063/1.4979029
Publication status	Published - 20 Mar 2017

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Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Vlasov, A. S., Davydov, V. Y., Smirnov, A. N., Bogdanov, A. A., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S., & Mintairov, A. M. (2017). Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk. Applied Physics Letters, 110(12), Article 121101. https://doi.org/10.1063/1.4979029

@article{03828ca0778747e59716fb367b820832,

title = "Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk",

abstract = "Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ∼2 nm, the lateral size of 20-50 nm, and the density of ∼5 × 109 cm−2. Their emission observed at ∼940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ∼3.2 μm and providing a free spectral range of ∼27 nm and quality factors up to Q∼13 000. Threshold of ∼50 W/cm2 and spontaneous emission coupling coefficient of ∼0.2 were measured for this MD-QD system.",

author = "Lebedev, \{D. V.\} and Kulagina, \{M. M.\} and Troshkov, \{S. I.\} and Vlasov, \{A. S.\} and Davydov, \{V. Y.\} and Smirnov, \{A. N.\} and Bogdanov, \{A. A.\} and Merz, \{J. L.\} and J. Kapaldo and A. Gocalinska and G. Juska and Moroni, \{S. T.\} and E. Pelucchi and D. Barettin and S. Rouvimov and Mintairov, \{A. M.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = mar,

day = "20",

doi = "10.1063/1.4979029",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

Lebedev, DV, Kulagina, MM, Troshkov, SI, Vlasov, AS, Davydov, VY, Smirnov, AN, Bogdanov, AA, Merz, JL, Kapaldo, J, Gocalinska, A, Juska, G, Moroni, ST, Pelucchi, E, Barettin, D, Rouvimov, S & Mintairov, AM 2017, 'Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk', Applied Physics Letters, vol. 110, no. 12, 121101. https://doi.org/10.1063/1.4979029

TY - JOUR

T1 - Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

AU - Lebedev, D. V.

AU - Kulagina, M. M.

AU - Troshkov, S. I.

AU - Vlasov, A. S.

AU - Davydov, V. Y.

AU - Smirnov, A. N.

AU - Bogdanov, A. A.

AU - Merz, J. L.

AU - Kapaldo, J.

AU - Gocalinska, A.

AU - Juska, G.

AU - Moroni, S. T.

AU - Pelucchi, E.

AU - Barettin, D.

AU - Rouvimov, S.

AU - Mintairov, A. M.

PY - 2017/3/20

Y1 - 2017/3/20

N2 - Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ∼2 nm, the lateral size of 20-50 nm, and the density of ∼5 × 109 cm−2. Their emission observed at ∼940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ∼3.2 μm and providing a free spectral range of ∼27 nm and quality factors up to Q∼13 000. Threshold of ∼50 W/cm2 and spontaneous emission coupling coefficient of ∼0.2 were measured for this MD-QD system.

AB - Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ∼2 nm, the lateral size of 20-50 nm, and the density of ∼5 × 109 cm−2. Their emission observed at ∼940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ∼3.2 μm and providing a free spectral range of ∼27 nm and quality factors up to Q∼13 000. Threshold of ∼50 W/cm2 and spontaneous emission coupling coefficient of ∼0.2 were measured for this MD-QD system.

UR - https://www.scopus.com/pages/publications/85016151313

U2 - 10.1063/1.4979029

DO - 10.1063/1.4979029

M3 - Article

AN - SCOPUS:85016151313

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121101

ER -

Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

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