Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures

B. Bonanni; E. Pelucchi; S. Rubini; D. Orani; A. Franciosi; A. Garulli; A. Parisini

doi:10.1063/1.1342043

Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures

B. Bonanni
, E. Pelucchi
, S. Rubini
, D. Orani
, A. Franciosi
, A. Garulli
, A. Parisini

Research output: Contribution to journal › Article › peer-review

Abstract

Lattice-matched Zn_0.85Cd_0.15Se/Zn_0.74Mg_0.26Se multiple-quantum-well structures were obtained on GaAs(001) using graded-composition In_yGa_1-y As layers to match the II-VI lattice parameter to the III-V substrate. Cross-sectional transmission electron microscopy studies show that the effect of the crosshatch pattern of the In_yGa_1-yAs surface is limited to long-period coherent undulations of quantum well and barrier layers. Optical measurements of the excitonic properties as a function of well thickness, complemented by self-consistent calculations of the transition energies, indicate good quantum confinement in the well, with a 68% conduction band contribution to the 0.482 eV band gap difference.

Original language	English
Pages (from-to)	434-436
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	4
DOIs	https://doi.org/10.1063/1.1342043
Publication status	Published - 22 Jan 2001
Externally published	Yes

Access to Document

10.1063/1.1342043

Cite this

@article{062b2999f8f34fb8850e1a9da5635c84,

title = "Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures",

abstract = "Lattice-matched Zn0.85Cd0.15Se/Zn0.74Mg0.26Se multiple-quantum-well structures were obtained on GaAs(001) using graded-composition InyGa1-y As layers to match the II-VI lattice parameter to the III-V substrate. Cross-sectional transmission electron microscopy studies show that the effect of the crosshatch pattern of the InyGa1-yAs surface is limited to long-period coherent undulations of quantum well and barrier layers. Optical measurements of the excitonic properties as a function of well thickness, complemented by self-consistent calculations of the transition energies, indicate good quantum confinement in the well, with a 68\% conduction band contribution to the 0.482 eV band gap difference.",

author = "B. Bonanni and E. Pelucchi and S. Rubini and D. Orani and A. Franciosi and A. Garulli and A. Parisini",

year = "2001",

month = jan,

day = "22",

doi = "10.1063/1.1342043",

language = "English",

volume = "78",

pages = "434--436",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures

AU - Bonanni, B.

AU - Pelucchi, E.

AU - Rubini, S.

AU - Orani, D.

AU - Franciosi, A.

AU - Garulli, A.

AU - Parisini, A.

PY - 2001/1/22

Y1 - 2001/1/22

N2 - Lattice-matched Zn0.85Cd0.15Se/Zn0.74Mg0.26Se multiple-quantum-well structures were obtained on GaAs(001) using graded-composition InyGa1-y As layers to match the II-VI lattice parameter to the III-V substrate. Cross-sectional transmission electron microscopy studies show that the effect of the crosshatch pattern of the InyGa1-yAs surface is limited to long-period coherent undulations of quantum well and barrier layers. Optical measurements of the excitonic properties as a function of well thickness, complemented by self-consistent calculations of the transition energies, indicate good quantum confinement in the well, with a 68% conduction band contribution to the 0.482 eV band gap difference.

AB - Lattice-matched Zn0.85Cd0.15Se/Zn0.74Mg0.26Se multiple-quantum-well structures were obtained on GaAs(001) using graded-composition InyGa1-y As layers to match the II-VI lattice parameter to the III-V substrate. Cross-sectional transmission electron microscopy studies show that the effect of the crosshatch pattern of the InyGa1-yAs surface is limited to long-period coherent undulations of quantum well and barrier layers. Optical measurements of the excitonic properties as a function of well thickness, complemented by self-consistent calculations of the transition energies, indicate good quantum confinement in the well, with a 68% conduction band contribution to the 0.482 eV band gap difference.

UR - https://www.scopus.com/pages/publications/0041329651

U2 - 10.1063/1.1342043

DO - 10.1063/1.1342043

M3 - Article

AN - SCOPUS:0041329651

SN - 0003-6951

VL - 78

SP - 434

EP - 436

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this