Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers

Brendan Roycroft; Pekko Sipil̈; Petri Melanen; Pekka Savolainen; Markus Pessa; Manuel Leońs; Sara Ṕrez; Guillermo Carpintero; Horacio Lamela

doi:10.1117/12.432579

Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers

Brendan Roycroft
, Pekko Sipil̈
, Petri Melanen
, Pekka Savolainen
, Markus Pessa
, Manuel Leońs
, Sara Ṕrez
, Guillermo Carpintero
, Horacio Lamela

Research output: Contribution to journal › Article › peer-review

Abstract

Laterally coupled diode lasers emitting at 1.3 μm are presented. Devices were fabricated with distances between ridges varying from 2.76 μm to 8.32 μm. Electronic coupling effects are investigated by individually varying the currents in each ridge while monitoring output power. It is observed that for devices with 8.32 μm separation between ridges there is minimal current sharing, whereas for 2.76 μm separation there is considerable current sharing. Optical coupling is measured via the far-field, where most devices show out-of-phase locking, although in-phase locking is observed in a minority of cases. Devices therefore show conditions necessary for the observation of high speed dynamics.

Original language	English
Pages (from-to)	310-315
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4283
Issue number	1
DOIs	https://doi.org/10.1117/12.432579
Publication status	Published - 9 Jul 2001
Externally published	Yes

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Roycroft, B., Sipil̈, P., Melanen, P., Savolainen, P., Pessa, M., Leońs, M., Ṕrez, S., Carpintero, G., & Lamela, H. (2001). Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers. Proceedings of SPIE - The International Society for Optical Engineering, 4283(1), 310-315. https://doi.org/10.1117/12.432579

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title = "Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers",

abstract = "Laterally coupled diode lasers emitting at 1.3 μm are presented. Devices were fabricated with distances between ridges varying from 2.76 μm to 8.32 μm. Electronic coupling effects are investigated by individually varying the currents in each ridge while monitoring output power. It is observed that for devices with 8.32 μm separation between ridges there is minimal current sharing, whereas for 2.76 μm separation there is considerable current sharing. Optical coupling is measured via the far-field, where most devices show out-of-phase locking, although in-phase locking is observed in a minority of cases. Devices therefore show conditions necessary for the observation of high speed dynamics.",

author = "Brendan Roycroft and Pekko Sipi{\"l} and Petri Melanen and Pekka Savolainen and Markus Pessa and Manuel Leo{\'n}s and Sara Ṕrez and Guillermo Carpintero and Horacio Lamela",

year = "2001",

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doi = "10.1117/12.432579",

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Roycroft, B, Sipil̈, P, Melanen, P, Savolainen, P, Pessa, M, Leońs, M, Ṕrez, S, Carpintero, G & Lamela, H 2001, 'Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers', Proceedings of SPIE - The International Society for Optical Engineering, vol. 4283, no. 1, pp. 310-315. https://doi.org/10.1117/12.432579

TY - JOUR

T1 - Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers

AU - Roycroft, Brendan

AU - Sipil̈, Pekko

AU - Melanen, Petri

AU - Savolainen, Pekka

AU - Pessa, Markus

AU - Leońs, Manuel

AU - Ṕrez, Sara

AU - Carpintero, Guillermo

AU - Lamela, Horacio

PY - 2001/7/9

Y1 - 2001/7/9

N2 - Laterally coupled diode lasers emitting at 1.3 μm are presented. Devices were fabricated with distances between ridges varying from 2.76 μm to 8.32 μm. Electronic coupling effects are investigated by individually varying the currents in each ridge while monitoring output power. It is observed that for devices with 8.32 μm separation between ridges there is minimal current sharing, whereas for 2.76 μm separation there is considerable current sharing. Optical coupling is measured via the far-field, where most devices show out-of-phase locking, although in-phase locking is observed in a minority of cases. Devices therefore show conditions necessary for the observation of high speed dynamics.

AB - Laterally coupled diode lasers emitting at 1.3 μm are presented. Devices were fabricated with distances between ridges varying from 2.76 μm to 8.32 μm. Electronic coupling effects are investigated by individually varying the currents in each ridge while monitoring output power. It is observed that for devices with 8.32 μm separation between ridges there is minimal current sharing, whereas for 2.76 μm separation there is considerable current sharing. Optical coupling is measured via the far-field, where most devices show out-of-phase locking, although in-phase locking is observed in a minority of cases. Devices therefore show conditions necessary for the observation of high speed dynamics.

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M3 - Article

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SN - 0277-786X

VL - 4283

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EP - 315

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 1

ER -

Experimental characterisation and analysis of the static behaviour of twin-ridge AlGaInAs laterally coupled diode lasers

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