Abstract
In this work, we report on the first successful deposition of Vernier phase yttrium oxyfluoride (V-YOF) thin films on Si (100) wafers using pulsed liquid injection metal organic chemical vapor deposition (PLI-MOCVD). The formation of V-YOF has been confirmed by X-ray diffraction measurements and electron probe microanalysis. The infrared phonon modes of V-YOF thin films and their corresponding optical constants as inferred from spectroscopic ellipsometry are reported here for the first time. The V-YOF thin films are featured by a broad absorption band centering around 370-373 cm-1; their refractive index is located between those of YF3 and Y2O3, and which shows an intimate relationship with the oxygen content in the film. The luminescence properties of Er3+ doped V-YOF thin films are finally examined and compared with that of YF3. Our results highlight that the as-deposited V-YOF thin films by PLI-MOCVD serve as promising candidates as efficient host material for spectral conversion for photovoltaic applications.
| Original language | Undefined/Unknown |
|---|---|
| Pages (from-to) | 2655-2661 |
| Number of pages | 7 |
| Journal | Dalton Transactions |
| Volume | 47 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2018 |