Extensive electrical and thermal characterization of an MCM-D technology

Manuel Lozano; Joaquín Santander; Enric Cabruja; Ana Collado; Miguel Ullán; Emilio Lora-Tamayo; Rory Doyle; Ger McCarthy; John Barton; Orla Slattery

doi:10.1109/6144.991183

Extensive electrical and thermal characterization of an MCM-D technology

Manuel Lozano
, Joaquín Santander
, Enric Cabruja
, Ana Collado
, Miguel Ullán
, Emilio Lora-Tamayo
, Rory Doyle
, Ger McCarthy
, John Barton
, Orla Slattery

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. The substrates can be either passive with interconnection lines, Rs, Cs, and Ls or active with complementary metal oxide semiconductor (CMOS) technology cells. The metals used in this technology are aluminum for interconnection purposes, tantalum silicide for making resistors and a multilayer of wettable metal for solder connection. Measurements of sheet resistance and contact resistance versus temperature in the range of -28 °C to 100 °C of the metals used in the technology are shown. A set of classic test structures such as Kelvin contacts, cross bridge resistors (CBR), and Van der Pauw structures have been used for this purpose as well as a new Kelvin-like structure to test the contact resistance of the Flip Chip connection through the ball. This structure has been proven to be very sensitive allowing the measurement of changes in ball resistance in the range of mΩ. A thermal model of the MCM package has been obtained, taking into account all the thermal resistances added by this kind of package.

Original language	English
Pages (from-to)	112-119
Number of pages	8
Journal	IEEE Transactions on Components and Packaging Technologies
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/6144.991183
Publication status	Published - Mar 2002

Keywords

Bump bonding
Electrical test structures
Flipchip
MCM-D
Multichip modules
Thermal analysis
Thermal modeling

Access to Document

10.1109/6144.991183

Cite this

@article{5aaad9b1411447d9aa5c46145cbc59a8,

title = "Extensive electrical and thermal characterization of an MCM-D technology",

abstract = "In this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. The substrates can be either passive with interconnection lines, Rs, Cs, and Ls or active with complementary metal oxide semiconductor (CMOS) technology cells. The metals used in this technology are aluminum for interconnection purposes, tantalum silicide for making resistors and a multilayer of wettable metal for solder connection. Measurements of sheet resistance and contact resistance versus temperature in the range of -28 °C to 100 °C of the metals used in the technology are shown. A set of classic test structures such as Kelvin contacts, cross bridge resistors (CBR), and Van der Pauw structures have been used for this purpose as well as a new Kelvin-like structure to test the contact resistance of the Flip Chip connection through the ball. This structure has been proven to be very sensitive allowing the measurement of changes in ball resistance in the range of mΩ. A thermal model of the MCM package has been obtained, taking into account all the thermal resistances added by this kind of package.",

keywords = "Bump bonding, Electrical test structures, Flipchip, MCM-D, Multichip modules, Thermal analysis, Thermal modeling",

author = "Manuel Lozano and Joaqu{\'i}n Santander and Enric Cabruja and Ana Collado and Miguel Ull{\'a}n and Emilio Lora-Tamayo and Rory Doyle and Ger McCarthy and John Barton and Orla Slattery",

year = "2002",

month = mar,

doi = "10.1109/6144.991183",

language = "English",

volume = "25",

pages = "112--119",

journal = "IEEE Transactions on Components and Packaging Technologies",

issn = "1521-3331",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Extensive electrical and thermal characterization of an MCM-D technology

AU - Lozano, Manuel

AU - Santander, Joaquín

AU - Cabruja, Enric

AU - Collado, Ana

AU - Ullán, Miguel

AU - Lora-Tamayo, Emilio

AU - Doyle, Rory

AU - McCarthy, Ger

AU - Barton, John

AU - Slattery, Orla

PY - 2002/3

Y1 - 2002/3

N2 - In this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. The substrates can be either passive with interconnection lines, Rs, Cs, and Ls or active with complementary metal oxide semiconductor (CMOS) technology cells. The metals used in this technology are aluminum for interconnection purposes, tantalum silicide for making resistors and a multilayer of wettable metal for solder connection. Measurements of sheet resistance and contact resistance versus temperature in the range of -28 °C to 100 °C of the metals used in the technology are shown. A set of classic test structures such as Kelvin contacts, cross bridge resistors (CBR), and Van der Pauw structures have been used for this purpose as well as a new Kelvin-like structure to test the contact resistance of the Flip Chip connection through the ball. This structure has been proven to be very sensitive allowing the measurement of changes in ball resistance in the range of mΩ. A thermal model of the MCM package has been obtained, taking into account all the thermal resistances added by this kind of package.

AB - In this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. The substrates can be either passive with interconnection lines, Rs, Cs, and Ls or active with complementary metal oxide semiconductor (CMOS) technology cells. The metals used in this technology are aluminum for interconnection purposes, tantalum silicide for making resistors and a multilayer of wettable metal for solder connection. Measurements of sheet resistance and contact resistance versus temperature in the range of -28 °C to 100 °C of the metals used in the technology are shown. A set of classic test structures such as Kelvin contacts, cross bridge resistors (CBR), and Van der Pauw structures have been used for this purpose as well as a new Kelvin-like structure to test the contact resistance of the Flip Chip connection through the ball. This structure has been proven to be very sensitive allowing the measurement of changes in ball resistance in the range of mΩ. A thermal model of the MCM package has been obtained, taking into account all the thermal resistances added by this kind of package.

KW - Bump bonding

KW - Electrical test structures

KW - Flipchip

KW - MCM-D

KW - Multichip modules

KW - Thermal analysis

KW - Thermal modeling

UR - https://www.scopus.com/pages/publications/0036506058

U2 - 10.1109/6144.991183

DO - 10.1109/6144.991183

M3 - Article

AN - SCOPUS:0036506058

SN - 1521-3331

VL - 25

SP - 112

EP - 119

JO - IEEE Transactions on Components and Packaging Technologies

JF - IEEE Transactions on Components and Packaging Technologies

IS - 1

ER -

Extensive electrical and thermal characterization of an MCM-D technology

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this