External reflection IR spectroscopy from trimethylgallium adsorbed at a GaAs (100) surface at 300 K - a feasibility study

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@article{ad74a8ae065a4324a7469e9951f9544a,

title = "External reflection IR spectroscopy from trimethylgallium adsorbed at a GaAs (100) surface at 300 K - a feasibility study",

author = "H. Patel and Pemble, \{M. E.\}",

year = "1992",

month = feb,

day = "1",

doi = "10.1016/0022-0248(92)90661-2",

language = "English",

volume = "116",

pages = "511--514",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3-4",

}

TY - JOUR

T1 - External reflection IR spectroscopy from trimethylgallium adsorbed at a GaAs (100) surface at 300 K - a feasibility study

AU - Patel, H.

AU - Pemble, M. E.

PY - 1992/2/1

Y1 - 1992/2/1

UR - https://www.scopus.com/pages/publications/0026819885

U2 - 10.1016/0022-0248(92)90661-2

DO - 10.1016/0022-0248(92)90661-2

M3 - Letter

AN - SCOPUS:0026819885

SN - 0022-0248

VL - 116

SP - 511

EP - 514

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -