Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate

S. N. Volkos; S. Bernardini; N. Rigopoulos; E. S. Efthymiou; I. D. Hawkins; B. Hamilton; L. Dobaczewski; S. Hall; P. K. Hurley; A. Delabie; A. R. Peaker

doi:10.1016/j.mee.2007.04.047

Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate

S. N. Volkos
, S. Bernardini
, N. Rigopoulos
, E. S. Efthymiou
, I. D. Hawkins
, B. Hamilton
, L. Dobaczewski
, S. Hall
, P. K. Hurley
, A. Delabie
, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

We report extrinsic stacking fault generation at the Si surface of samples with HfAl_xO_y and HfO₂ high-k dielectrics grown by MOCVD at 500 and 350 °C respectively and discuss its origin. As opposed to a recent assertion [Kim and Yong, J. Appl. Phys. 100 (2006) 044106] ascribing the formation of dislocations in a HfSi_xO_y-Si system prepared by ALD at 300 °C to diffusion of Hf atoms during film growth into the Si substrate, we found no such evidence for samples whose Si substrate was ALD-covered with HfO₂ and HfSi_xO_y dielectrics at a comparable temperature to the above ALD and MOCVD cases.

Original language	English
Pages (from-to)	2374-2377
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	9-10
DOIs	https://doi.org/10.1016/j.mee.2007.04.047
Publication status	Published - Sep 2007

Keywords

Defects
DLTS
Frank partial dislocations
Hafnium
High-k dielectrics
PL
Selective etch
Silicon
Stacking faults

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10.1016/j.mee.2007.04.047

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@article{4efedb7147d34561924b22c8787fdf3f,

title = "Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate",

abstract = "We report extrinsic stacking fault generation at the Si surface of samples with HfAlxOy and HfO2 high-k dielectrics grown by MOCVD at 500 and 350 °C respectively and discuss its origin. As opposed to a recent assertion [Kim and Yong, J. Appl. Phys. 100 (2006) 044106] ascribing the formation of dislocations in a HfSixOy-Si system prepared by ALD at 300 °C to diffusion of Hf atoms during film growth into the Si substrate, we found no such evidence for samples whose Si substrate was ALD-covered with HfO2 and HfSixOy dielectrics at a comparable temperature to the above ALD and MOCVD cases.",

keywords = "Defects, DLTS, Frank partial dislocations, Hafnium, High-k dielectrics, PL, Selective etch, Silicon, Stacking faults",

author = "Volkos, \{S. N.\} and S. Bernardini and N. Rigopoulos and Efthymiou, \{E. S.\} and Hawkins, \{I. D.\} and B. Hamilton and L. Dobaczewski and S. Hall and Hurley, \{P. K.\} and A. Delabie and Peaker, \{A. R.\}",

year = "2007",

month = sep,

doi = "10.1016/j.mee.2007.04.047",

language = "English",

volume = "84",

pages = "2374--2377",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "9-10",

}

TY - JOUR

T1 - Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate

AU - Volkos, S. N.

AU - Bernardini, S.

AU - Rigopoulos, N.

AU - Efthymiou, E. S.

AU - Hawkins, I. D.

AU - Hamilton, B.

AU - Dobaczewski, L.

AU - Hall, S.

AU - Hurley, P. K.

AU - Delabie, A.

AU - Peaker, A. R.

PY - 2007/9

Y1 - 2007/9

N2 - We report extrinsic stacking fault generation at the Si surface of samples with HfAlxOy and HfO2 high-k dielectrics grown by MOCVD at 500 and 350 °C respectively and discuss its origin. As opposed to a recent assertion [Kim and Yong, J. Appl. Phys. 100 (2006) 044106] ascribing the formation of dislocations in a HfSixOy-Si system prepared by ALD at 300 °C to diffusion of Hf atoms during film growth into the Si substrate, we found no such evidence for samples whose Si substrate was ALD-covered with HfO2 and HfSixOy dielectrics at a comparable temperature to the above ALD and MOCVD cases.

AB - We report extrinsic stacking fault generation at the Si surface of samples with HfAlxOy and HfO2 high-k dielectrics grown by MOCVD at 500 and 350 °C respectively and discuss its origin. As opposed to a recent assertion [Kim and Yong, J. Appl. Phys. 100 (2006) 044106] ascribing the formation of dislocations in a HfSixOy-Si system prepared by ALD at 300 °C to diffusion of Hf atoms during film growth into the Si substrate, we found no such evidence for samples whose Si substrate was ALD-covered with HfO2 and HfSixOy dielectrics at a comparable temperature to the above ALD and MOCVD cases.

KW - Defects

KW - DLTS

KW - Frank partial dislocations

KW - Hafnium

KW - High-k dielectrics

KW - PL

KW - Selective etch

KW - Silicon

KW - Stacking faults

UR - https://www.scopus.com/pages/publications/34248670695

U2 - 10.1016/j.mee.2007.04.047

DO - 10.1016/j.mee.2007.04.047

M3 - Article

AN - SCOPUS:34248670695

SN - 0167-9317

VL - 84

SP - 2374

EP - 2377

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 9-10

ER -

Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate

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Keywords

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