Fabrication and characterisation of CMOS-compatible tungsten nanobolometers

Stephen F. Gilmartin; Khalil Arshak; Arousian Arshak; William A. Lane; Dave Bain; Damian Collins; Brendan McCarthy; Simon B. Newcomb

Fabrication and characterisation of CMOS-compatible tungsten nanobolometers

Stephen F. Gilmartin
, Khalil Arshak
, Arousian Arshak
, William A. Lane
, Dave Bain
, Damian Collins
, Brendan McCarthy
, Simon B. Newcomb

University of Limerick
Analog Devices, Inc.
Boston Scientific
Glebe Laboratories

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We demonstrate the use of tungsten metal as a CMOS-compatible nanobolometer and microbolometer resistor material. Our tungsten bolometer devices use serpentine resistor designs, with 125 nm film thicknesses and feature critical dimensions (CDs) ranging from 80 nm to 350 nm. Our sensor meanders were patterned using electron beam lithography (EBL) and integrated within a 0.5 μm triple level metal (TLM) CMOS fabrication process. We thermally isolated our sensor structures from the wafer substrate using MEMS-based silicon bulk micromachining (SBM). We present temperature coefficient of resistance (TCR) and physical data showing stable SiO₂-encapsulated tungsten nanobolometer performance under current stress conditions. Our tungsten devices demonstrate the potential of tungsten as a CMOS-compatible nanobolometer and microbolometer material.

Original language	English
Title of host publication	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages	382-385
Number of pages	4
Publication status	Published - 2009
Event	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, Italy Duration: 26 Jul 2009 → 30 Jul 2009

Publication series

Name	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Conference

Conference	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Country/Territory	Italy
City	Genoa
Period	26/07/09 → 30/07/09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

CMOS
Hydrogen
Nanobolometer
TCR
Tungsten

Cite this

@inproceedings{2336f156ae47429abe4408d3c9ba04d2,

title = "Fabrication and characterisation of CMOS-compatible tungsten nanobolometers",

abstract = "We demonstrate the use of tungsten metal as a CMOS-compatible nanobolometer and microbolometer resistor material. Our tungsten bolometer devices use serpentine resistor designs, with 125 nm film thicknesses and feature critical dimensions (CDs) ranging from 80 nm to 350 nm. Our sensor meanders were patterned using electron beam lithography (EBL) and integrated within a 0.5 μm triple level metal (TLM) CMOS fabrication process. We thermally isolated our sensor structures from the wafer substrate using MEMS-based silicon bulk micromachining (SBM). We present temperature coefficient of resistance (TCR) and physical data showing stable SiO2-encapsulated tungsten nanobolometer performance under current stress conditions. Our tungsten devices demonstrate the potential of tungsten as a CMOS-compatible nanobolometer and microbolometer material.",

keywords = "CMOS, Hydrogen, Nanobolometer, TCR, Tungsten",

author = "Gilmartin, \{Stephen F.\} and Khalil Arshak and Arousian Arshak and Lane, \{William A.\} and Dave Bain and Damian Collins and Brendan McCarthy and Newcomb, \{Simon B.\}",

year = "2009",

language = "English",

isbn = "9789810836948",

series = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009",

pages = "382--385",

booktitle = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009",

note = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 ; Conference date: 26-07-2009 Through 30-07-2009",

}

Gilmartin, SF, Arshak, K, Arshak, A, Lane, WA, Bain, D, Collins, D, McCarthy, B & Newcomb, SB 2009, Fabrication and characterisation of CMOS-compatible tungsten nanobolometers. in 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009., 5394665, 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, pp. 382-385, 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, Genoa, Italy, 26/07/09.

Fabrication and characterisation of CMOS-compatible tungsten nanobolometers. / Gilmartin, Stephen F.; Arshak, Khalil; Arshak, Arousian et al.
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009. 2009. p. 382-385 5394665 (2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Fabrication and characterisation of CMOS-compatible tungsten nanobolometers

AU - Gilmartin, Stephen F.

AU - Arshak, Khalil

AU - Arshak, Arousian

AU - Lane, William A.

AU - Bain, Dave

AU - Collins, Damian

AU - McCarthy, Brendan

AU - Newcomb, Simon B.

PY - 2009

Y1 - 2009

N2 - We demonstrate the use of tungsten metal as a CMOS-compatible nanobolometer and microbolometer resistor material. Our tungsten bolometer devices use serpentine resistor designs, with 125 nm film thicknesses and feature critical dimensions (CDs) ranging from 80 nm to 350 nm. Our sensor meanders were patterned using electron beam lithography (EBL) and integrated within a 0.5 μm triple level metal (TLM) CMOS fabrication process. We thermally isolated our sensor structures from the wafer substrate using MEMS-based silicon bulk micromachining (SBM). We present temperature coefficient of resistance (TCR) and physical data showing stable SiO2-encapsulated tungsten nanobolometer performance under current stress conditions. Our tungsten devices demonstrate the potential of tungsten as a CMOS-compatible nanobolometer and microbolometer material.

AB - We demonstrate the use of tungsten metal as a CMOS-compatible nanobolometer and microbolometer resistor material. Our tungsten bolometer devices use serpentine resistor designs, with 125 nm film thicknesses and feature critical dimensions (CDs) ranging from 80 nm to 350 nm. Our sensor meanders were patterned using electron beam lithography (EBL) and integrated within a 0.5 μm triple level metal (TLM) CMOS fabrication process. We thermally isolated our sensor structures from the wafer substrate using MEMS-based silicon bulk micromachining (SBM). We present temperature coefficient of resistance (TCR) and physical data showing stable SiO2-encapsulated tungsten nanobolometer performance under current stress conditions. Our tungsten devices demonstrate the potential of tungsten as a CMOS-compatible nanobolometer and microbolometer material.

KW - CMOS

KW - Hydrogen

KW - Nanobolometer

KW - TCR

KW - Tungsten

UR - https://www.scopus.com/pages/publications/77950988821

M3 - Conference proceeding

AN - SCOPUS:77950988821

SN - 9789810836948

T3 - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

SP - 382

EP - 385

BT - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

T2 - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Y2 - 26 July 2009 through 30 July 2009

ER -

Fabrication and characterisation of CMOS-compatible tungsten nanobolometers

Abstract

Publication series

Conference

UN SDGs

Keywords

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Cite this