Abstract
Microresonators structures were patterned using a selective wet chemical etch (between semiconductor and adjacent layers). As mask undercutting proceeds the etch profile becomes more anisotropic. Wet etching will be essential for the operation of submicron devices due to reduced surface damage compared with dry etching. The epilayer contains three sets of three quantum wells. The quantum wells are placed resonant with the antinodes of the final optical cavity, which is formed by depositing silicon dioxide and silicon layers.
| Original language | English |
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| Publication status | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe - Amsterdam, Neth Duration: 28 Aug 1994 → 2 Sep 1994 |
Conference
| Conference | Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe |
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| City | Amsterdam, Neth |
| Period | 28/08/94 → 2/09/94 |