Abstract
Red vertical cavity lasers (VCSELs) are ideally suited as optical sources for plastic optical fibre networks. These networks will form the communication backbone of future automobiles and aircraft replacing the current copper networks. However VCSELs at these wavelengths are difficult to realize due to the lower refractive index offsets and unsuitable band structure alignments. The Esprit BREDSELS project has addressed the design, growth and fabrication of low threshold red VCSELs. This paper reports the fabrication of record low threshold (200 μA at 20 °C) VCSELs at a wavelength of 665 nm. This device performance has been achieved through the use of selective oxidation techniques. The devices operate CW to 50 °C. The trade off between low threshold and high power will be discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 517-521 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 3 |
| Issue number | 5-6 |
| DOIs | |
| Publication status | Published - 1 Oct 2000 |
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