Fabrication, simulation and characterisation of MEMS piezoelectric vibration energy harvester for low frequency

A. Sharma; O. Z. Olszewski; J. Torres; A. Mathewson; R. Houlihan

doi:10.1016/j.proeng.2015.08.695

Fabrication, simulation and characterisation of MEMS piezoelectric vibration energy harvester for low frequency

A. Sharma
, O. Z. Olszewski
, J. Torres
, A. Mathewson
, R. Houlihan

Tyndall IPES (Integrated Power)

Research output: Contribution to journal › Article › peer-review

Abstract

A MEMS vibration energy harvester using an Aluminium Nitride (AlN) piezoelectric layer was designed, fabricated and characterized. The harvester was fabricated on an SOI wafer with a 30μm device silicon layer which serves as the structural beam on which a 0.5μm AlN layer is sandwiched between the top and bottom electrodes. The handle silicon serves as the proof mass. The harvester has a measured resonant frequency of around 114Hz and an average output power of 54nW was measured at optimal load and a low level of acceleration (24 mili-g). A 3D finite element model of the harvester was created in COMSOL Multiphysics and the obtained results are in close agreement with the measured data.

Original language	English
Pages (from-to)	645-650
Number of pages	6
Journal	Procedia Engineering
Volume	120
DOIs	https://doi.org/10.1016/j.proeng.2015.08.695
Publication status	Published - 2015
Event	29th European Conference on Solid-State Transducers, EUROSENSORS 2015; Freiburg; Germany; 6 September 2015 through 9 September 2015. - Freiburg, Germany Duration: 6 Sep 2015 → 9 Sep 2015

Keywords

Aluminium Nitride
Energy harvesting
MEMS
Piezoelectric
Vibrations

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10.1016/j.proeng.2015.08.695

Cite this

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title = "Fabrication, simulation and characterisation of MEMS piezoelectric vibration energy harvester for low frequency",

abstract = "A MEMS vibration energy harvester using an Aluminium Nitride (AlN) piezoelectric layer was designed, fabricated and characterized. The harvester was fabricated on an SOI wafer with a 30μm device silicon layer which serves as the structural beam on which a 0.5μm AlN layer is sandwiched between the top and bottom electrodes. The handle silicon serves as the proof mass. The harvester has a measured resonant frequency of around 114Hz and an average output power of 54nW was measured at optimal load and a low level of acceleration (24 mili-g). A 3D finite element model of the harvester was created in COMSOL Multiphysics and the obtained results are in close agreement with the measured data.",

keywords = "Aluminium Nitride, Energy harvesting, MEMS, Piezoelectric, Vibrations",

author = "A. Sharma and Olszewski, \{O. Z.\} and J. Torres and A. Mathewson and R. Houlihan",

note = "Publisher Copyright: {\textcopyright} 2015 The Authors. Published by Elsevier Ltd.; 29th European Conference on Solid-State Transducers, EUROSENSORS 2015; Freiburg; Germany; 6 September 2015 through 9 September 2015. ; Conference date: 06-09-2015 Through 09-09-2015",

year = "2015",

doi = "10.1016/j.proeng.2015.08.695",

language = "English",

volume = "120",

pages = "645--650",

journal = "Procedia Engineering",

issn = "1877-7058",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Fabrication, simulation and characterisation of MEMS piezoelectric vibration energy harvester for low frequency

AU - Sharma, A.

AU - Olszewski, O. Z.

AU - Torres, J.

AU - Mathewson, A.

AU - Houlihan, R.

PY - 2015

Y1 - 2015

N2 - A MEMS vibration energy harvester using an Aluminium Nitride (AlN) piezoelectric layer was designed, fabricated and characterized. The harvester was fabricated on an SOI wafer with a 30μm device silicon layer which serves as the structural beam on which a 0.5μm AlN layer is sandwiched between the top and bottom electrodes. The handle silicon serves as the proof mass. The harvester has a measured resonant frequency of around 114Hz and an average output power of 54nW was measured at optimal load and a low level of acceleration (24 mili-g). A 3D finite element model of the harvester was created in COMSOL Multiphysics and the obtained results are in close agreement with the measured data.

AB - A MEMS vibration energy harvester using an Aluminium Nitride (AlN) piezoelectric layer was designed, fabricated and characterized. The harvester was fabricated on an SOI wafer with a 30μm device silicon layer which serves as the structural beam on which a 0.5μm AlN layer is sandwiched between the top and bottom electrodes. The handle silicon serves as the proof mass. The harvester has a measured resonant frequency of around 114Hz and an average output power of 54nW was measured at optimal load and a low level of acceleration (24 mili-g). A 3D finite element model of the harvester was created in COMSOL Multiphysics and the obtained results are in close agreement with the measured data.

KW - Aluminium Nitride

KW - Energy harvesting

KW - MEMS

KW - Piezoelectric

KW - Vibrations

UR - https://www.scopus.com/pages/publications/84984982000

U2 - 10.1016/j.proeng.2015.08.695

DO - 10.1016/j.proeng.2015.08.695

M3 - Article

AN - SCOPUS:84984982000

SN - 1877-7058

VL - 120

SP - 645

EP - 650

JO - Procedia Engineering

JF - Procedia Engineering

T2 - 29th European Conference on Solid-State Transducers, EUROSENSORS 2015; Freiburg; Germany; 6 September 2015 through 9 September 2015.

Y2 - 6 September 2015 through 9 September 2015

ER -

Fabrication, simulation and characterisation of MEMS piezoelectric vibration energy harvester for low frequency

Abstract

Keywords

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