Abstract
Far-infrared RAIRS spectroscopy employing synchrotron radiation as a source, has been used to study the interaction of SnCl4 on a thin-film silica surface. This has been made possible by growing the silica film on a highly reflecting tungsten
substrate, enabling the conventional RAIRS geometry to be used. We show
that reasonable S/N RAIRS spectra can be obtained in this region, even
from films up to 1000 Å thick, enabling subtle details in the spectrum of the chemisorbed species to be obtained.
| Original language | English |
|---|---|
| Pages (from-to) | L1-L7 |
| Number of pages | 8 |
| Journal | Surface Science |
| Volume | 418 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jun 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Accelerator-based Sources of Infrared and Spectroscopic Applications - Denver, CO, USA Duration: 19 Jul 1999 → 20 Jul 1999 |
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