Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

W. H. Fan; S. M. Olaizola; J. P.R. Wells; A. M. Fox; T. Wang; P. J. Parbrook; D. J. Mowbray; M. S. Skolnick

doi:10.1063/1.1707226

Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

W. H. Fan
, S. M. Olaizola
, J. P.R. Wells
, A. M. Fox
, T. Wang
, P. J. Parbrook
, D. J. Mowbray
, M. S. Skolnick

Research output: Contribution to journal › Article › peer-review

Abstract

The carrier density and temperature dependence of the quantum well electron capture time of blue-emitting InGaN/GaN multiple quantum well (QW) structures were investigated using subpicosecond time-resolved differential transmission spectroscopy. It was found that the capture time varies significantly with both temperature and carrier density. The electron capture time was in the range 0.4-0.8 ps for carrier densities ≤5×10¹⁸ cm^-3 at room temperature. It was shown that the capture time were deduced from the rise time of the QW differential transmission signal following photoexcitation of carriers in the barriers by femtosecond ultraviolet (UV) pulses.

Original language	English
Pages (from-to)	3052-3054
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	16
DOIs	https://doi.org/10.1063/1.1707226
Publication status	Published - 19 Apr 2004
Externally published	Yes

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10.1063/1.1707226

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title = "Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells",

abstract = "The carrier density and temperature dependence of the quantum well electron capture time of blue-emitting InGaN/GaN multiple quantum well (QW) structures were investigated using subpicosecond time-resolved differential transmission spectroscopy. It was found that the capture time varies significantly with both temperature and carrier density. The electron capture time was in the range 0.4-0.8 ps for carrier densities ≤5×1018 cm-3 at room temperature. It was shown that the capture time were deduced from the rise time of the QW differential transmission signal following photoexcitation of carriers in the barriers by femtosecond ultraviolet (UV) pulses.",

author = "Fan, \{W. H.\} and Olaizola, \{S. M.\} and Wells, \{J. P.R.\} and Fox, \{A. M.\} and T. Wang and Parbrook, \{P. J.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2004",

month = apr,

day = "19",

doi = "10.1063/1.1707226",

language = "English",

volume = "84",

pages = "3052--3054",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

AU - Fan, W. H.

AU - Olaizola, S. M.

AU - Wells, J. P.R.

AU - Fox, A. M.

AU - Wang, T.

AU - Parbrook, P. J.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2004/4/19

Y1 - 2004/4/19

N2 - The carrier density and temperature dependence of the quantum well electron capture time of blue-emitting InGaN/GaN multiple quantum well (QW) structures were investigated using subpicosecond time-resolved differential transmission spectroscopy. It was found that the capture time varies significantly with both temperature and carrier density. The electron capture time was in the range 0.4-0.8 ps for carrier densities ≤5×1018 cm-3 at room temperature. It was shown that the capture time were deduced from the rise time of the QW differential transmission signal following photoexcitation of carriers in the barriers by femtosecond ultraviolet (UV) pulses.

AB - The carrier density and temperature dependence of the quantum well electron capture time of blue-emitting InGaN/GaN multiple quantum well (QW) structures were investigated using subpicosecond time-resolved differential transmission spectroscopy. It was found that the capture time varies significantly with both temperature and carrier density. The electron capture time was in the range 0.4-0.8 ps for carrier densities ≤5×1018 cm-3 at room temperature. It was shown that the capture time were deduced from the rise time of the QW differential transmission signal following photoexcitation of carriers in the barriers by femtosecond ultraviolet (UV) pulses.

UR - https://www.scopus.com/pages/publications/2442536704

U2 - 10.1063/1.1707226

DO - 10.1063/1.1707226

M3 - Article

AN - SCOPUS:2442536704

SN - 0003-6951

VL - 84

SP - 3052

EP - 3054

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

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