Filled- and empty-state imaging of (2 × 4) reconstructed InP (001) surfaces with STM

Q. Guo; M. E. Pemble; E. M. Williams

doi:10.1016/S0039-6028(99)00121-1

Filled- and empty-state imaging of (2 × 4) reconstructed InP (001) surfaces with STM

Q. Guo
, M. E. Pemble
, E. M. Williams

Research output: Contribution to journal › Article › peer-review

Abstract

InP (001) surfaces prepared by sputter-annealing and by annealing in a P₂ atmosphere have been studied using scanning tunnelling microscopy (STM). Annealing a phosphorus-rich (2×1) surface to above 600 K leads to the formation of the (2×4) surface. The filled- and empty-state STM images obtained from large areas with ordered (2×4) reconstruction are consistent with a two phosphorus dimer-two missing dimer model. The transition from (2×1) to (2×4) reconstruction proceeds through an intermediate stage where local regions showing mixed (2×4)/(2×2) forms are observed.

Original language	English
Pages (from-to)	410-414
Number of pages	5
Journal	Surface Science
Volume	433-435
DOIs	https://doi.org/10.1016/S0039-6028(99)00121-1
Publication status	Published - 2 Aug 1999
Event	Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) - Birmingham, United Kingdom Duration: 31 Aug 1998 → 4 Sep 1998

Keywords

Scanning tunnelling microscopy
Semiconductor surfaces

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10.1016/S0039-6028(99)00121-1

Cite this

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title = "Filled- and empty-state imaging of (2 × 4) reconstructed InP (001) surfaces with STM",

abstract = "InP (001) surfaces prepared by sputter-annealing and by annealing in a P2 atmosphere have been studied using scanning tunnelling microscopy (STM). Annealing a phosphorus-rich (2×1) surface to above 600 K leads to the formation of the (2×4) surface. The filled- and empty-state STM images obtained from large areas with ordered (2×4) reconstruction are consistent with a two phosphorus dimer-two missing dimer model. The transition from (2×1) to (2×4) reconstruction proceeds through an intermediate stage where local regions showing mixed (2×4)/(2×2) forms are observed.",

keywords = "Scanning tunnelling microscopy, Semiconductor surfaces",

author = "Q. Guo and Pemble, \{M. E.\} and Williams, \{E. M.\}",

year = "1999",

month = aug,

day = "2",

doi = "10.1016/S0039-6028(99)00121-1",

language = "English",

volume = "433-435",

pages = "410--414",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) ; Conference date: 31-08-1998 Through 04-09-1998",

}

TY - JOUR

T1 - Filled- and empty-state imaging of (2 × 4) reconstructed InP (001) surfaces with STM

AU - Guo, Q.

AU - Pemble, M. E.

AU - Williams, E. M.

PY - 1999/8/2

Y1 - 1999/8/2

N2 - InP (001) surfaces prepared by sputter-annealing and by annealing in a P2 atmosphere have been studied using scanning tunnelling microscopy (STM). Annealing a phosphorus-rich (2×1) surface to above 600 K leads to the formation of the (2×4) surface. The filled- and empty-state STM images obtained from large areas with ordered (2×4) reconstruction are consistent with a two phosphorus dimer-two missing dimer model. The transition from (2×1) to (2×4) reconstruction proceeds through an intermediate stage where local regions showing mixed (2×4)/(2×2) forms are observed.

AB - InP (001) surfaces prepared by sputter-annealing and by annealing in a P2 atmosphere have been studied using scanning tunnelling microscopy (STM). Annealing a phosphorus-rich (2×1) surface to above 600 K leads to the formation of the (2×4) surface. The filled- and empty-state STM images obtained from large areas with ordered (2×4) reconstruction are consistent with a two phosphorus dimer-two missing dimer model. The transition from (2×1) to (2×4) reconstruction proceeds through an intermediate stage where local regions showing mixed (2×4)/(2×2) forms are observed.

KW - Scanning tunnelling microscopy

KW - Semiconductor surfaces

UR - https://www.scopus.com/pages/publications/0033350023

U2 - 10.1016/S0039-6028(99)00121-1

DO - 10.1016/S0039-6028(99)00121-1

M3 - Article

AN - SCOPUS:0033350023

SN - 0039-6028

VL - 433-435

SP - 410

EP - 414

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10)

Y2 - 31 August 1998 through 4 September 1998

ER -

Filled- and empty-state imaging of (2 × 4) reconstructed InP (001) surfaces with STM

Abstract

Keywords

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