@inbook{7b500ff6cca249f8a74ed39b927cb270,
title = "FinFET doping; material science, metrology, and process modeling studies for optimized device performance",
abstract = "In this review paper the challenges that face doping optimization in 3-dimensional (3D) thin-body silicon devices will be discussed, within the context of material science studies, metrology methodologies, process modeling insight, ultimately leading to optimized device performance. The focus will be on ion implantation at the method to introduce the dopants to the target material.",
keywords = "doping, FinFETs, Ion implantation, multi-gate devices",
author = "R. Duffy and M. Shayesteh",
year = "2010",
doi = "10.1063/1.3548341",
language = "English",
isbn = "9780735408760",
series = "AIP Conference Proceedings",
pages = "17--22",
booktitle = "Ion Implantation Technology 2010 - 18th International Conference on Ion Implantation Technology, IIT 2010",
note = "18th International Conference on Ion Implantation Technology, IIT 2010 ; Conference date: 06-06-2010 Through 11-06-2010",
}