TY - GEN
T1 - First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering
AU - Vais, A.
AU - Alcotte, R.
AU - Ingels, M.
AU - Wambacq, P.
AU - Parvais, B.
AU - Langer, R.
AU - Kunert, B.
AU - Waldron, N.
AU - Collaert, N.
AU - Witters, L.
AU - Mols, Y.
AU - Hernandez, A. S.
AU - Walke, A.
AU - Yu, H.
AU - Baryshnikova, M.
AU - Mannaert, G.
AU - Deshpande, V.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.
AB - In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.
UR - https://www.scopus.com/pages/publications/85081053268
U2 - 10.1109/IEDM19573.2019.8993539
DO - 10.1109/IEDM19573.2019.8993539
M3 - Conference proceeding
AN - SCOPUS:85081053268
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Y2 - 7 December 2019 through 11 December 2019
ER -