@inbook{738ce5843e2c45e3aa39b11d344f4801,
title = "First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling",
abstract = "Vt-mismatch, and thus SRAM scalability, is greatly improved in narrow SOI FinFETs, with respect to planar bulk, because of their undoped channel and near-ideal gate control. We show by simulations and by measurements that in FinFETs, unlike planar bulk, β-mismatch becomes dominant, leading to radically different SRAM characteristics. By careful process tuning, we demonstrate a substantial reduction in β-mismatch. We show the impact of this novel mismatch behavior on SRAM performance and yield under various optimization strategies and thereby provide guidelines for SRAM design in a FinFET technology.",
author = "T. M{\'e}relle and G. Curatola and A. Nackaerts and N. Collaert and \{Van Dal\}, \{M. J.H.\} and G. Doornbos and Doorn, \{T. S.\} and P. Christie and G. Vellianitis and B. Duriez and R. Duffy and Pawlak, \{B. J.\} and Voogt, \{F. C.\} and R. Rooyackers and L. Witters and M. Jurczak and Lander, \{R. J.P.\}",
year = "2008",
doi = "10.1109/IEDM.2008.4796662",
language = "English",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}