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First-principles studies of the defect formation in III-V FETs grown by fin replacement method

  • H. Minari
  • , S. Yoshida
  • , K. Sawada
  • , M. Nakazawa
  • , M. Caymax
  • , C. Merckling
  • , N. Waldron
  • , W. Guo
  • , S. Jiang
  • , N. Collaert
  • , E. Simoen
  • , D. Lin
  • , G. Pourtois

Research output: Contribution to journal › Article › peer-review

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