Abstract
This study investigates various approaches to flare mitigation in EUVL. We evaluate the effectiveness of rule-based correction by defining a design where the critical dimension uniformity is used as a measure of the quality of the correction. We also describe the outcome of a model-based correction and the limits of this approach. Finally, we discuss the calculation of accurate full-chip flare maps which are required to implement a rule-based solution. Our results clearly indicate that it is possible to implement an effective flare variation compensation using rule-base correction with current EDA technology, provided that highly accurate full-chip flare maps having the required resolution are available.
| Original language | English |
|---|---|
| Pages (from-to) | 738-743 |
| Number of pages | 6 |
| Journal | Microelectronic Engineering |
| Volume | 85 |
| Issue number | 5-6 |
| DOIs | |
| Publication status | Published - May 2008 |
| Externally published | Yes |
Keywords
- EUVL
- Flare
- Optical proximity correction
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