TY - JOUR
T1 - Flare mitigation strategies in extreme ultraviolet lithography
AU - Kim, Insung
AU - Myers, Alan
AU - III, Lawrence S.Melvin
AU - Ward, Brian
AU - Lorusso, Gian Francesco
AU - Jonckheere, Rik
AU - Goethals, Anne Marie
AU - Ronse, Kurt
PY - 2008/5
Y1 - 2008/5
N2 - This study investigates various approaches to flare mitigation in EUVL. We evaluate the effectiveness of rule-based correction by defining a design where the critical dimension uniformity is used as a measure of the quality of the correction. We also describe the outcome of a model-based correction and the limits of this approach. Finally, we discuss the calculation of accurate full-chip flare maps which are required to implement a rule-based solution. Our results clearly indicate that it is possible to implement an effective flare variation compensation using rule-base correction with current EDA technology, provided that highly accurate full-chip flare maps having the required resolution are available.
AB - This study investigates various approaches to flare mitigation in EUVL. We evaluate the effectiveness of rule-based correction by defining a design where the critical dimension uniformity is used as a measure of the quality of the correction. We also describe the outcome of a model-based correction and the limits of this approach. Finally, we discuss the calculation of accurate full-chip flare maps which are required to implement a rule-based solution. Our results clearly indicate that it is possible to implement an effective flare variation compensation using rule-base correction with current EDA technology, provided that highly accurate full-chip flare maps having the required resolution are available.
KW - EUVL
KW - Flare
KW - Optical proximity correction
UR - https://www.scopus.com/pages/publications/44149102934
U2 - 10.1016/j.mee.2008.01.098
DO - 10.1016/j.mee.2008.01.098
M3 - Article
AN - SCOPUS:44149102934
SN - 0167-9317
VL - 85
SP - 738
EP - 743
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 5-6
ER -