@inproceedings{82e4f68ad0e44c09a8dd22320f52eb8c,
title = "Fluorine implantation in germanium for dopant diffusion control",
abstract = "The authors investigate F as a non-dopant co-implant to suppress P and As diffusion in Ge. F was placed either overlaying the dopant profile, or deeper to counteract the influence of end-of-range defects, which is a common ultra-shallow junction optimization approach in Si substrates. It was determined that F outgasses extremely quickly from Ge, as a 1×1015cm -2 implanted dose escaped completely during a rapid thermal anneal as short as 1 sec, at 600°C. This behavior is attributed to rapid diffusion, instability of F-defect clusters, and an aversion of F to reside substitutionally in the Ge lattice. The F diffusivity at 600°C is in the order of some metal impurity diffusivities at that temperature.",
keywords = "arsenic, Dopant diffusion, fluorine, germanium, phosphorus",
author = "M. Shayesteh and V. Djara and M. Schmidt and M. White and Kelleher, \{A. M.\} and Ray Duffy",
year = "2012",
doi = "10.1063/1.4766503",
language = "English",
isbn = "9780735411098",
series = "AIP Conference Proceedings",
pages = "115--118",
booktitle = "Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology",
note = "19th International Conference on Ion Implantation Technology 2012, IIT 2012 ; Conference date: 25-06-2012 Through 29-06-2012",
}