@inbook{c308bb62c9084deeac83b2c5218f364d,
title = "Fluorine profile distortion upon annealing by the presence of a CVD grown boron box",
abstract = "We provide experimental evidence of the distortion of a F profile by the presence of a CVD grown B box. After annealing, a depletion in the F profile is observed fitting the position of the immobile part of B profile. To study this phenomenon further experiments were designed and atomistic simulations were done using a recently developed F model. In this model F complexes with both Si interstitials (F-I) and vacancies (F-V) are included. The formation of Boron-Interstitial Clusters is found to reduce the local Si interstitials defect concentration. This feature may be responsible for the reported F distortion by the presence of a B box.",
keywords = "Boron clustering, Extended defects, Fluorine complexes, Fluorine implantation, Modeling",
author = "P. L{\'o}pez and L. Pelaz and R. Duffy and P. Meunier-Beillard and \{Van Der Tak\}, K. and F. Roozeboom and G. Maas",
year = "2006",
doi = "10.1063/1.2401454",
language = "English",
isbn = "0735403651",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
pages = "29--32",
booktitle = "ION IMPLANTATION TECHNOLOGY",
note = "ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 ; Conference date: 11-06-2006 Through 16-11-2006",
}