Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing

Elizabeth Buitrago; Montserrat Fernandez Bolanos Badia; Yordan M. Georgiev; Ran Yu; Olan Lotty; Justin D. Holmes; Adrian M. Nightingale; Adrian M. Ionescu

doi:10.1109/DRC.2013.6633887

Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing

Elizabeth Buitrago
, Montserrat Fernandez Bolanos Badia
, Yordan M. Georgiev
, Ran Yu
, Olan Lotty
, Justin D. Holmes
, Adrian M. Nightingale
, Adrian M. Ionescu

School of Chemistry

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized for streptavidin detection for the first time. The channels are surrounded by conformal high-κ gate dielectrics (HfO₂), and their conductivity can be uniquely tuned by three gates; a backgate (BG) and two symmetrical Pt side gates (SG) through a liquid, offering unique sensitivity tuning with high gate coupling (SS=75 mV/dec, α'=SS_60mV/dec/SS_measured=0.8, with highest sensitivity=93-99%, obtained for I=1 0pA-10nA, in weak inversion) ever published.

Original language	English
Title of host publication	71st Device Research Conference, DRC 2013 - Conference Digest
Edition	SUPPL.
DOIs	https://doi.org/10.1109/DRC.2013.6633887
Publication status	Published - 2013
Event	71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States Duration: 23 Jun 2013 → 26 Jun 2013

Publication series

Name	Device Research Conference - Conference Digest, DRC
Number	SUPPL.
ISSN (Print)	1548-3770

Conference

Conference	71st Device Research Conference, DRC 2013
Country/Territory	United States
City	Notre Dame, IN
Period	23/06/13 → 26/06/13

Access to Document

10.1109/DRC.2013.6633887

Cite this

Buitrago, E., Badia, M. F. B., Georgiev, Y. M., Yu, R., Lotty, O., Holmes, J. D., Nightingale, A. M., & Ionescu, A. M. (2013). Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing. In 71st Device Research Conference, DRC 2013 - Conference Digest (SUPPL. ed.). Article 6633887 (Device Research Conference - Conference Digest, DRC; No. SUPPL.). https://doi.org/10.1109/DRC.2013.6633887

@inbook{23184430995943d2a0e3e712ef678fce,

title = "Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing",

abstract = "A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized for streptavidin detection for the first time. The channels are surrounded by conformal high-κ gate dielectrics (HfO2), and their conductivity can be uniquely tuned by three gates; a backgate (BG) and two symmetrical Pt side gates (SG) through a liquid, offering unique sensitivity tuning with high gate coupling (SS=75 mV/dec, α'=SS60mV/dec/SSmeasured=0.8, with highest sensitivity=93-99\%, obtained for I=1 0pA-10nA, in weak inversion) ever published.",

author = "Elizabeth Buitrago and Badia, \{Montserrat Fernandez Bolanos\} and Georgiev, \{Yordan M.\} and Ran Yu and Olan Lotty and Holmes, \{Justin D.\} and Nightingale, \{Adrian M.\} and Ionescu, \{Adrian M.\}",

year = "2013",

doi = "10.1109/DRC.2013.6633887",

language = "English",

isbn = "9781479908110",

series = "Device Research Conference - Conference Digest, DRC",

number = "SUPPL.",

booktitle = "71st Device Research Conference, DRC 2013 - Conference Digest",

edition = "SUPPL.",

note = "71st Device Research Conference, DRC 2013 ; Conference date: 23-06-2013 Through 26-06-2013",

}

Buitrago, E, Badia, MFB, Georgiev, YM, Yu, R, Lotty, O, Holmes, JD, Nightingale, AM & Ionescu, AM 2013, Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing. in 71st Device Research Conference, DRC 2013 - Conference Digest. SUPPL. edn, 6633887, Device Research Conference - Conference Digest, DRC, no. SUPPL., 71st Device Research Conference, DRC 2013, Notre Dame, IN, United States, 23/06/13. https://doi.org/10.1109/DRC.2013.6633887

Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing. / Buitrago, Elizabeth; Badia, Montserrat Fernandez Bolanos; Georgiev, Yordan M. et al.
71st Device Research Conference, DRC 2013 - Conference Digest. SUPPL. ed. 2013. 6633887 (Device Research Conference - Conference Digest, DRC; No. SUPPL.).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing

AU - Buitrago, Elizabeth

AU - Badia, Montserrat Fernandez Bolanos

AU - Georgiev, Yordan M.

AU - Yu, Ran

AU - Lotty, Olan

AU - Holmes, Justin D.

AU - Nightingale, Adrian M.

AU - Ionescu, Adrian M.

PY - 2013

Y1 - 2013

N2 - A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized for streptavidin detection for the first time. The channels are surrounded by conformal high-κ gate dielectrics (HfO2), and their conductivity can be uniquely tuned by three gates; a backgate (BG) and two symmetrical Pt side gates (SG) through a liquid, offering unique sensitivity tuning with high gate coupling (SS=75 mV/dec, α'=SS60mV/dec/SSmeasured=0.8, with highest sensitivity=93-99%, obtained for I=1 0pA-10nA, in weak inversion) ever published.

AB - A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized for streptavidin detection for the first time. The channels are surrounded by conformal high-κ gate dielectrics (HfO2), and their conductivity can be uniquely tuned by three gates; a backgate (BG) and two symmetrical Pt side gates (SG) through a liquid, offering unique sensitivity tuning with high gate coupling (SS=75 mV/dec, α'=SS60mV/dec/SSmeasured=0.8, with highest sensitivity=93-99%, obtained for I=1 0pA-10nA, in weak inversion) ever published.

UR - https://www.scopus.com/pages/publications/84890070388

U2 - 10.1109/DRC.2013.6633887

DO - 10.1109/DRC.2013.6633887

M3 - Chapter

AN - SCOPUS:84890070388

SN - 9781479908110

T3 - Device Research Conference - Conference Digest, DRC

BT - 71st Device Research Conference, DRC 2013 - Conference Digest

T2 - 71st Device Research Conference, DRC 2013

Y2 - 23 June 2013 through 26 June 2013

ER -

Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing

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