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GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment

  • University of Bristol
  • University of Surrey

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band k·p Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1-x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1-x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain-A first for this emerging material system-and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 μm.

Original languageEnglish
Title of host publication16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
EditorsMartijn de Sterke, Christopher Poulton, Joachim Piprek, Michael Steel
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages209-210
Number of pages2
ISBN (Electronic)9781467386036
DOIs
Publication statusPublished - 17 Aug 2016
Event16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016 - Sydney, Australia
Duration: 11 Jul 201615 Jul 2016

Publication series

Name16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016

Conference

Conference16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
Country/TerritoryAustralia
CitySydney
Period11/07/1615/07/16

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