GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

B. Parvais; A. Alian; U. Peralagu; R. Rodriguez; S. Yadav; A. Khaled; R. Y. Elkashlan; V. Putcha; A. Sibaja-Hernandez; M. Zhao; P. Wambacq; N. Collaert; N. Waldron

doi:10.1109/IEDM13553.2020.9372056

GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

B. Parvais
, A. Alian
, U. Peralagu
, R. Rodriguez
, S. Yadav
, A. Khaled
, R. Y. Elkashlan
, V. Putcha
, A. Sibaja-Hernandez
, M. Zhao
, P. Wambacq
, N. Collaert
, N. Waldron

Interuniversitair Micro-Elektronica Centrum
Vrije Universiteit Brussel

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8.1.1-8.1.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9372056
Publication status	Published - 12 Dec 2020
Externally published	Yes
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 12 Dec 2020 → 18 Dec 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 18/12/20

Access to Document

10.1109/IEDM13553.2020.9372056

Cite this

Parvais, B., Alian, A., Peralagu, U., Rodriguez, R., Yadav, S., Khaled, A., Elkashlan, R. Y., Putcha, V., Sibaja-Hernandez, A., Zhao, M., Wambacq, P., Collaert, N., & Waldron, N. (2020). GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 8.1.1-8.1.4). Article 9372056 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9372056

@inproceedings{73528f586d924766a001669ccbae73ce,

title = "GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL",

abstract = "We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.",

author = "B. Parvais and A. Alian and U. Peralagu and R. Rodriguez and S. Yadav and A. Khaled and Elkashlan, \{R. Y.\} and V. Putcha and A. Sibaja-Hernandez and M. Zhao and P. Wambacq and N. Collaert and N. Waldron",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9372056",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "8.1.1--8.1.4",

booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",

address = "United States",

}

Parvais, B, Alian, A, Peralagu, U, Rodriguez, R, Yadav, S, Khaled, A, Elkashlan, RY, Putcha, V, Sibaja-Hernandez, A, Zhao, M, Wambacq, P, Collaert, N & Waldron, N 2020, GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9372056, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 8.1.1-8.1.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9372056

GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. / Parvais, B.; Alian, A.; Peralagu, U. et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 8.1.1-8.1.4 9372056 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

AU - Parvais, B.

AU - Alian, A.

AU - Peralagu, U.

AU - Rodriguez, R.

AU - Yadav, S.

AU - Khaled, A.

AU - Elkashlan, R. Y.

AU - Putcha, V.

AU - Sibaja-Hernandez, A.

AU - Zhao, M.

AU - Wambacq, P.

AU - Collaert, N.

AU - Waldron, N.

PY - 2020/12/12

Y1 - 2020/12/12

N2 - We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.

AB - We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.

UR - https://www.scopus.com/pages/publications/85102944259

U2 - 10.1109/IEDM13553.2020.9372056

DO - 10.1109/IEDM13553.2020.9372056

M3 - Conference proceeding

AN - SCOPUS:85102944259

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 8.1.1-8.1.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Parvais B, Alian A, Peralagu U, Rodriguez R, Yadav S, Khaled A et al. GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 8.1.1-8.1.4. 9372056. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9372056

GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

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