GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure

J. J. Toriz-Garcia; P. J. Parbrook; D. A. Wood; J. P.R. David

GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure

J. J. Toriz-Garcia
, P. J. Parbrook
, D. A. Wood
, J. P.R. David

University of Sheffield

Research output: Contribution to conference › Paper › peer-review

Abstract

GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure grown by metalorganic vapour phase epitaxy (MOVPE) are reported. The metal contacts used in this work are Ti/Au or Au. The devices characterised present a low dark current below 1 pA and typical photocurrent I-V characteristics at 360 nm. The photodetectors exhibit internal gain and visible blindness. The responsivity is 0.001 A/W in the visible region, which is approximate three orders of magnitude less than the above gap responsivity.

Original language	English
Pages	131-136
Number of pages	6
Publication status	Published - 2001
Externally published	Yes
Event	2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications - Vienna, Austria Duration: 15 Nov 2001 → 16 Nov 2001

Conference

Conference	2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Country/Territory	Austria
City	Vienna
Period	15/11/01 → 16/11/01

Cite this

@conference{c70ef085c9c84eeeb27c4a5b3e99d661,

title = "GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure",

abstract = "GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure grown by metalorganic vapour phase epitaxy (MOVPE) are reported. The metal contacts used in this work are Ti/Au or Au. The devices characterised present a low dark current below 1 pA and typical photocurrent I-V characteristics at 360 nm. The photodetectors exhibit internal gain and visible blindness. The responsivity is 0.001 A/W in the visible region, which is approximate three orders of magnitude less than the above gap responsivity.",

author = "Toriz-Garcia, \{J. J.\} and Parbrook, \{P. J.\} and Wood, \{D. A.\} and David, \{J. P.R.\}",

year = "2001",

language = "English",

pages = "131--136",

note = "2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications ; Conference date: 15-11-2001 Through 16-11-2001",

}

TY - CONF

T1 - GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure

AU - Toriz-Garcia, J. J.

AU - Parbrook, P. J.

AU - Wood, D. A.

AU - David, J. P.R.

PY - 2001

Y1 - 2001

N2 - GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure grown by metalorganic vapour phase epitaxy (MOVPE) are reported. The metal contacts used in this work are Ti/Au or Au. The devices characterised present a low dark current below 1 pA and typical photocurrent I-V characteristics at 360 nm. The photodetectors exhibit internal gain and visible blindness. The responsivity is 0.001 A/W in the visible region, which is approximate three orders of magnitude less than the above gap responsivity.

AB - GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure grown by metalorganic vapour phase epitaxy (MOVPE) are reported. The metal contacts used in this work are Ti/Au or Au. The devices characterised present a low dark current below 1 pA and typical photocurrent I-V characteristics at 360 nm. The photodetectors exhibit internal gain and visible blindness. The responsivity is 0.001 A/W in the visible region, which is approximate three orders of magnitude less than the above gap responsivity.

UR - https://www.scopus.com/pages/publications/0035573401

M3 - Paper

AN - SCOPUS:0035573401

SP - 131

EP - 136

T2 - 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications

Y2 - 15 November 2001 through 16 November 2001

ER -

GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure

Abstract

Conference

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