Gate current: Modeling, ΔL extraction and impact on RF performance

R. Van Langevelde; A. J. Scholten; R. Duffy; F. N. Cubaynes; M. J. Knitel; D. B.M. Klaassen

Gate current: Modeling, ΔL extraction and impact on RF performance

R. Van Langevelde
, A. J. Scholten
, R. Duffy
, F. N. Cubaynes
, M. J. Knitel
, D. B.M. Klaassen

Koninklijke Philips N.V.

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.

Original language	English
Pages (from-to)	289-292
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2001
Externally published	Yes
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2 Dec 2001 → 5 Dec 2001

Cite this

@article{9a435587f5164fd38f43aed42ee23c89,

title = "Gate current: Modeling, ΔL extraction and impact on RF performance",

abstract = "In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.",

author = "\{Van Langevelde\}, R. and Scholten, \{A. J.\} and R. Duffy and Cubaynes, \{F. N.\} and Knitel, \{M. J.\} and Klaassen, \{D. B.M.\}",

year = "2001",

language = "English",

pages = "289--292",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - Gate current

T2 - IEEE International Electron Devices Meeting IEDM 2001

AU - Van Langevelde, R.

AU - Scholten, A. J.

AU - Duffy, R.

AU - Cubaynes, F. N.

AU - Knitel, M. J.

AU - Klaassen, D. B.M.

PY - 2001

Y1 - 2001

N2 - In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.

AB - In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.

UR - https://www.scopus.com/pages/publications/0035718182

M3 - Article

AN - SCOPUS:0035718182

SN - 0163-1918

SP - 289

EP - 292

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

Y2 - 2 December 2001 through 5 December 2001

ER -

Gate current: Modeling, ΔL extraction and impact on RF performance

Abstract

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