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Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

  • W. S. Tan
  • , P. A. Houston
  • , P. J. Parbrook
  • , D. A. Wood
  • , G. Hill
  • , C. R. Whitehouse
  • University of Sheffield

Research output: Contribution to journal › Article › peer-review

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